Kabushiki Kaisha Toshiba

Ebara Corporation

Jsr Corporation

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Toshiba Memory Corporation

Atsushi Shigeta

Hiroyuki Yano

Masako Kodera

Hiromi Yajima

Yukiteru Matsui

Riichirou Aoki

Shiro Mishima

Gaku Minamihaba

Takeo Kubota

Riichiro Aoki

Gen Toyota

Gisuke Kouno

Tetsuji Togawa

Norio Kimura

Haruo Okano

Manabu Tsujimura

Tamami Takahashi

Toyomi Nishi

Shoichi Kodama

Yukio Imoto

Harumitsu Saito

Kazuaki Himukai

Masako Watase

Kenya Ito

Shinro Ohta

Koji Ono

Yoichi Kobayashi

Hirokazu Kato

Katsuya Okumura

Seiji Ishikawa

Koji Maruyama

Dai Fukushima

Masayoshi Hirose

Noburu Shimizu

Yoshikuni Tateyama

Shunsuke Nakai

Takeshi Nishioka

Shinrou Ohta

Toshiro Maekawa

Yoshitaka Matsui

Shinichi Hirasawa

Ryuichiro Mitani

Satoko Seta

Kazuhiko Ida

Makoto Honda

Masayuki Hattori

Yukio Ikeda

Kiyotaka Miyano

Kenji Yamaguchi

Masaya Seki

Taro Takahashi

Tohru Watanabe

Masayuki Nakanishi

Naoto Miyashita

Hirokazu Ezawa

Tatsuya Sasaki

Nobuo Kawahashi

Mitsuo Tada

You Ishii

Kunio Oishi

Hiroaki Kusa

Hirotaka Shida

Naoki Ozawa

Kazuo Nishimoto

Hidetaka Nakao

Satomi Hamada

Hajime Eda

Akihiro Takemura

Motohiro Niijima

Fumihiko Sakata

Yoshifumi Katsumata

Kaori Yomogihara

Shunsuke Doi

Takatoshi Ono

Masako Kinoshita

Yasumitsu Kawabata

Tatsuaki Sakano

Shirou Mishima

Motoaki Okada

Daisaku Fukuoka

A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

Processing end point detection method, polishing method, and polishing apparatus

Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.

Polishing endpoint detection method

A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.

Polishing apparatus and polishing method

There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 &#x3bc;m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 &#x3bc;m, and a surfactant having a hydrophilic moiety.

Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device

Polishing endpoint detection apparatus

A polishing apparatus includes a substrate holder configured to hold and rotate a substrate, a press pad configured to press a polishing tape having a polishing surface against a bevel portion of the substrate held by the substrate holder, and a feeding mechanism configured to cause the polishing tape to travel in its longitudinal direction. The press pad includes a hard member having a pressing surface for pressing the bevel portion of the substrate through the polishing tape, and at least one elastic member for pressing the hard member against the bevel portion of the substrate through the belt-shaped polishing tool.

A substrate polishing apparatus is provided for preventing excessive polishing and insufficient polishing, and enabling a quantitative setting of an additional polishing time. The substrate polishing apparatus comprises a mechanism for polishing a substrate to be polished; a film thickness measuring device for measuring the thickness of a thin film deposited on the substrate; an interface for entering a target thickness for the polished thin film; a storage area for preserving past polishing results; and a processing unit for calculating a polishing time and a polishing rate. The substrate polishing apparatus builds an additional polishing database for storing data acquired from the result of additional polishing in the storage area.

Substrate polishing apparatus

A substrate treating method includes rotating a substrate in a circumferential direction and polishing a peripheral portion of the substrate by pressing a polishing member to it using a pressing mechanism having a pressing pad. An angle of at least a part of the pressing pad with respect to an axial direction, in which the pressing mechanism makes the pressing pad press the peripheral portion of the substrate, is changed by an angle displacement mechanism which actively displaces the angle so that the polishing is performed depending on a surface to be polished in the peripheral portion.

Substrate treating method and substrate treating apparatus

A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

Chemical mechanical polishing method and method of manufacturing semiconductor device

In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

Method of manufacturing semiconductor device

A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing the amorphous silicon film and partially removing the semiconductor substrate, thereby forming an element isolation trench in a surface of the semiconductor substrate, forming an insulating film above the amorphous silicon film so that the element isolation trench is filled with the insulating film, polishing the insulating film by a chemical-mechanical polishing method with the amorphous silicon film serving as a stopper, thereby planarizing an upper surface of the insulating film, and thermally-treating the amorphous silicon film, thereby converting the amorphous silicon film to a polysilicon film after polishing the insulating film.

Method of fabricating semiconductor device

A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrateby a motor, polishing a first surface of a peripheral portion of the substrateby pressing a polishing surface of a polishing mechanismagainst the first surface, determining a polishing end point of the first surface by monitoring a polished state of the first surface, stopping the polishing according to the determining the polishing end point, determining a polishing time spent for the polishing, determining a polishing time for a second surface of the peripheral portion based on the polishing time of the first surface, and polishing the second surface for the determined polishing time.

Substrate processing method and substrate processing apparatus

A polishing apparatus has a polishing tape (), a supply reel () for supplying the polishing tape () to a contact portion () at which the polishing tape () is brought into contact with a notch portion () of a substrate (), and a take-up reel () for winding up the polishing tape () from the contact portion (). The polishing apparatus also has a first guide portion () having as guide surface () for supplying the polishing tape () directly to the contact portion (), and a second guide portion () having a guide surface for supplying the polishing tape () tot the take-up reel (). The guide surface () of the first guide portion () and/or the guide surface of the second guide portion () has a shape corresponding to a shape of the notch portion () of the substrate ().

A method of manufacturing a semiconductor device includes depositing a SiOfilm on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiOfilm; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

Method of manufacturing a semiconductor device

Growing community of inventors

Fujisawa, Japan

Atsushi Shigeta