Anelva Corporation

Dai Nippon Printing Co., Ltd.

Hitachi High-tech Corporation

Canon Anelva Corporation

Atsushi Sekiguchi

Kenji Ueda

Yukio Taniguchi

Tsuyoshi Hotta

Hideyuki Iriyama

Ryoki Tobe

Hiroyuki Nishimura

Kazuhiro Suga

Tsukasa Kobayashi

Shinji Takagi

Masao Sasaki

Akiko Kobayashi

Tomoaki Koide

Hitoshi Jimba

So Won Kim

Hideo Mito

Minjuan Zhang

Tatehito Usui

Kaoru Suzuki

Shigeru Nakamoto

Yasuaki Tanaka

Masami Shibagaki

Ken-ichi Takagi

Osamu Okada

Hiroyuki Kobayashi

Kazunori Shinoda

Soichiro Eto

Hiroshi Doi

Nobuya Miyoshi

Yoshimitsu Kodaira

Yukito Nakagawa

Miyako Matsui

Susumu Akiyama

Tsubasa Okamoto

Hiroshi Akasaka

Toshiaki Sasaki

Tatsuo Asamaki

Hidekazu Suzuki

Naoko Matsui

Hideki Sunayama

Shiqin Xiao

Ko Sang Tae

Naohiro Kawamoto

Ryo Matsuhashi

Takafumi Kuninobu

This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.

Wafer processing method and plasma processing apparatus

A plasma processing apparatusthat performs, on a waferin which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamberwhich is disposed inside a vacuum container; a sample stagewhich is disposed inside the processing chamber and on which the wafer is placed; a detection unitwhich detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unitwhich controls plasma processing on the wafer; and an end point determination unitwhich determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.

Plasma processing apparatus and plasma processing method

An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Etching apparatus

The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatusis provided with a processing chamberpartitioning a processing space, a discharge vesselwhose one end opens facing inside the processing chamberand the other end is closed, an antennawhich is disposed around the discharge vesseland generates an induced electric field to generate plasma in the discharge vesselunder reduced pressure, and an electromagnetwhich is arranged around the discharge vesseland forms a divergent magnetic field in the discharge vessel. The discharge vesselhas at its closed end portion a protrusionprojecting toward the processing chamber

Plasma processing apparatus and device manufacturing method

The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

Hologram recording sheet, holographic optical element using said sheet, and its production process

A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Method for forming a copper thin film

In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.

Method and system for forming copper thin film

A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500&deg; C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.

Method for the formation of copper wiring films

A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.004-02 g/min, (c) a second flow controller capable of setting a flow rate of a first carrier gas mixed with the TDAAT to any level within a range of 100-1000 sccm, (d) a third flow controller capable of setting a flow rate of an added gas reactable with the TDAAT to any level within a range of 10-100 sccm, (e) a fourth flow controller capable of setting a flow rate of a second carrier gas being mixed with the added gas to any level within a range of 10-500 sccm, (f) a first supply conduit for mixing the TDAAT and the first carrier gas to create a first mixed gas and guiding the resulting first mixed gas into the reaction vessel, (g) a second supply conduit for mixing the added gas and the second carrier gas to create a second mixed gas and guiding the resulting second mixed gas into the reaction vessel, and (h) a shower head which is provided with a plurality of first nozzles connected to the first supply conduit, and a plurality of second nozzles connected to the second supply conduit, and which is configured such that the first and second mixed gases are fed into the reaction vessel through the nozzles.

Method of depositing titanium nitride thin film and CVD deposition apparatus

A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure P of the source-material gas is set in a range of 0<P /P <10 with respect to the partial pressure P of the added ammonia gas.

Method for manufacturing a titanium nitride thin film

In the field of depositing a metal film for wiring purposes on a substrate by means of single-substrate processing CVD, a procedure for depositing a copper film on a substrate is carried out by utilizing a first CVD module in which film deposition is carried out under first film deposition conditions where the film deposition rate is low and the filling characteristics are good, and a second CVD module in which film deposition is carried out under second film deposition conditions where the film deposition rate is high and the filling characteristics are poor. One CVD film deposition process in which a metal film for wiring purposes is deposited is carried out with sub-processes based on two different sets of film deposition conditions.

Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers

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Tokyo, Japan

Atsushi Sekiguchi