Sony Corporation

Mitsui Chemicals, Inc.

T.rad Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Asahi Kasei Chemicals Corporation

Asahi Kasei Kabushiki Kaisha

Sony Group Corporation

Atsushi Okubo

Taiji Sakai

Takuya Bungo

Kazuo Kohmura

Yosuke Ono

Kenta Kawamoto

Kohtaro Sabe

Masaki Fukuchi

Tatsuhiro Urakami

Yoshihiro Sakata

Daiki Taneichi

Ken Miyashita

Jun Yokono

Nobuhisa Miyake

Masaaki Shinohata

Kazumi Aoyama

Hideki Shimomura

Tsuyoshi Fujimoto

Kiyoshi Yoshikawa

Masahiro Fujita

Akichika Tanaka

Yasuhiro Sutou

Kiyofumi Muro

Takao Suzuki

Yasuharu Asano

Takeshi Ohashi

Koichi Sakumoto

Keiichi Yamada

Yoshihiro Wakita

Yasuhisa Fujii

Kenichi Hidai

Kotaro Sabe

Yohei Kawamoto

Tsuneaki Biyajima

Hisako Ishikawa

Kenichi Fukukawa

Masaki Okazaki

Yumi Naito

Yoshikazu Yamada

Satoru Okada

Rika Horinaka

Takeo Yamada

Gabriel Costa

Yasuyuki Sato

Toshiaki Hirota

Akira Ishikawa

Atsuko Sekiguchi

Yuichi Kato

Shinya Ohtani

Osamu Hanagata

Tsutomu Wada

Yasuo Oeda

Steffen Gutmann

Kota Aizawa

Takashi Kozeki

Noriyuki Ishii

Takeshi Koiso

Ning Zhou

Budianto Nishiyama

Kouichi Igarashi

Yasushi Yoshino

Yousuke Ono

Ying Zhou

Kazuo Maegawa

Jun Ono

Ryohei Ogawa

Akira Komuro

Kensuke Shiozawa

Hiro Kubota

Yoshihiko Sasaki

Hirotaka Ueki

Nobuko Matsumoto

A pellicle film for photolithography including a carbon nanotube film, in which the carbon nanotube film contains carbon nanotubes; the carbon nanotube film transmits 80% or more of EUV light at a wavelength of 13.5 nm; the carbon nanotube film has a thickness from 1 nm to 50 nm; the carbon nanotube film is deposited on a silicon substrate, in which the 3σ of the reflectance is 15% or less when the reflectance of the deposited carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions: the diameter of measurement spots, 20 μm; the reference measurement wavelength, 285 nm; the number of measurement spots, 121 spots; the distance between the centers of adjacent measurement spots, 40 μm.

Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography

In a header plate structure of heat exchangers having a core divided in plurality, a flat tube is inserted into each of the tube insertion holes having a burring, which is formed in a header plate; the flat tube is joined at an inner surface in the vicinity of a top portion of the burring; a burring with height His formed to a long side portion of a dummy tube insertion hole; and a burring with height His formed to a long side portion of an end portion tube insertion hole adjacent to the dummy tube insertion hole, in which height Hof the burring of the end portion tube insertion hole has been formed higher than the height Hof the burring of the dummy tube insertion hole.

Header plates structure of heat exchanger

To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.

Pellicle, exposure master, exposure device and method for manufacturing semiconductor device

To mitigate thermal stress concentration in the vicinity of a flow-volume limiting portion in a stacked plate heat exchanger to thereby prevent fatigue breaking due to the same. The flow-volume limiting portion is also provided with opening portions that are similar to those in flow paths to reduce rigidity difference from flow path portions.

Stacked plate heat exchanger

There is provided an electronic apparatus, and an improved design flexibility and minimized power consumption for biometric authentication in an electronic apparatus that performs biometric authentication, the electronic apparatus including: a wearable part movable to be worn on a user's body; and a biometric information acquisition unit provided on the wearable part and configured to acquire biometric information of the user for user authentication. This configuration makes it possible to improve design flexibility and minimize power consumption for biometric authentication in an electronic apparatus that performs biometric authentication.

Electronic apparatus, authentication method, and program

A device and a method are provided which perform movement vector calculation processing from photographing images for which a microlens array is used without generating whole images. Specifically, consecutive photographing images photographed by an imaging section having a microlens array are input, and a movement vector between the images is calculated. A movement vector calculating section calculates the movement vector corresponding to a feature point by using microlens photographing images photographed by respective microlenses. When the movement vector corresponding to the feature point within duplicate image regions having the same image region within a plurality of microlens photographing images is calculated, an average value of a plurality of movement vectors corresponding to the same feature point is calculated and is set as the movement vector of the feature point. Alternatively, an average value of plural movement vectors remaining after an outlier (abnormal value) is excluded is calculated and is set as the movement vector of the feature point.

Image processing device, image processing method, and program

Provided is a supporting frame in which a vent hole detachably arranging a filter and to which a pellicle film for extreme ultraviolet lithography can be attached. A support frame according to an embodiment of the present invention is a support frame for arranging a pellicle film, the support frame has a through hole being made from a hole extending along a first direction, the first direction being almost parallel to a surface direction of the pellicle film, and a hole extending along a second direction, the second direction not being parallel to the first direction; and the support frame includes a filter, the filter arranged at an inside of the through hole or at an end of the through hole, and the filter is arranged apart from the pellicle film.

Supporting frame for pellicle, pellicle, method for manufacturing same, exposure master using same, and method for manufacturing semiconductor device

A support frame for pellicle is provided including a first support frame part, a second support frame part, and a filter, wherein the filter has a flat plate-shaped frame shape and is sandwiched by the first support frame part and the second support frame part, the first support frame part includes a first body part having a flat plate-shaped frame shape and a first engaging portion protruded from the first body part to a thickness direction of the support frame for pellicle, and the second support frame part includes a second body part having a flat plate-shaped frame shape and a second engaging portion of the second body part engaging with the first engaging portion being arranged in a concave part provided in the thickness direction of the support frame for pellicle.

Pellicle support frame, pellicle, method for manufacturing pellicle support frame, and exposure original plate and exposure device employing pellicle

A pellicle for EUV exposure that has a high transmittance to EUV light, causes little outgassing, and is not much contaminated, and a method for manufacturing the same are provided. A pellicle () includes a pellicle film (); a support frame (); and a first adhesive layer () provided at an end of the support frame, the end being opposite to an end on which the pellicle film is extended. The pellicle further includes an inorganic layer () on a side surface of the first adhesive layer, the side surface extending in a direction crossing a surface of the pellicle film, and the pellicle film being extended on the side surface. The inorganic layer has a mass absorption coefficient (&#x3bc;) in the range of 5&#xd7;10cm/g to 2&#xd7;10cm2/g.

Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

A structure of a drawn cup-type heat exchanger of improved pressure tightness is provided. A drawn cup-type heat exchanger is configured by stacking in plural number a long and thin tube element containing an inner fin inside a pair of cup plates. The cup plates have a flat containing portion containing the inner fin and a pair of cup portions communicating with both end portions of the containing portion; a circulation hole for communicating fluid into each of tube elements to be stacked is formed in the cup portions; and, to position both end portions in a longitudinal direction of the inner fin to be contained in front of the circulation hole of the cup portions, a corner portion is formed at at least one end portion in a width direction at both extremities in a longitudinal direction of the containing portion.

Drawn cup-type heat exchanger

Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.

Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device

To provide a plate laminate type heat exchanger that is capable to be temporarily fixed easily and surely before brazing assembly and can be fabricated with good accuracy. In a plate laminate type heat exchanger using a cladding material cladded with a brazing material, in each of laminated plates, a round hole penetrating in a laminate direction is formed; a thin and long fixing pin is inserted into the round hole so as to communicate each of plates; the fixing pin is fixed to the round hole by expansion of the outer diameter only at one end part in the longitudinal direction of the fixing pin; and each of plates is temporarily fixed integrally.

Plate laminate type heat exchanger

In a laminated core type heat sink in which a plate is formed by arranging a plurality of slits in parallel to a metal flat plate and by laminating the plate in large numbers, the thickness of a second plate positioned second in the lamination direction from an end lid to which a semiconductor is attached is made greater than thickness of a first plate other than the second plate.

Laminated core type heat sink

There is provided a speckle measurement apparatus to improve accuracy of flow velocity measurement or the like of particulates such as erythrocytes, the speckle measurement apparatus including an imager that captures scattered light images returned from an object to be measured when the object to be measured is irradiated with coherent light as speckle images, and a controller that determines a measurement area that is the same site of the object to be measured in a plurality of the speckle images captured continuously in time series by the imager by incorporating a displacement amount of a relative positional relationship between the object to be measured and the imager.

Speckle measurement apparatus and speckle measurement method

Conditions are found for a heat sink having the highest heat exchange performance on the basis of mutual relationship among thickness of each plate, slit pitch, and horizontal rib, in a laminated heat sink core in which numerous parallel slits are punched in a plate, slender vertical ribs are disposed therebetween and the plate is laminated.

Laminated heat sink core

Growing community of inventors

Tokyo, Japan

Atsushi Okubo