Sharp Kabushiki Kaisha Corporation

Sumitomo Special Metals Co., Ltd.

Neomax Co., Ltd.

Takeda Pharmaceutical Company Limited

Kaneka Medix Corporation

Atsushi Ogawa

Takayuki Yuasa

Masahiro Araki

Yoshihiro Ueta

Yuhzoh Tsuda

Masaya Ishida

Daisuke Hanaoka

Satoshi Komada

Yoshihiko Tani

Takuro Ishikura

Toshiaki Tamura

Mototaka Taneya

Hiroshi Nakatsu

Nobuyuki Ito

Hiroki Takaoka

Hidefumi Yoshida

Akira Sakai

Masahiro Hasegawa

Haruhisa Takiguchi

Shigeaki Mizushima

Hiroyuki Hakoi

Hitoshi Morimoto

Nobuaki Teraguchi

Yasushi Yamanaka

Shuhei Okumura

Takao Kinoshita

Shinya Yoshida

Yushi Inoue

Osamu Fujii

Akira Koike

Masahiko Takiguchi

Masayuki Hoteida

Atsuo Tanaka

Takamasa Shimizu

Hiroo Iwata

Kohichi Takaku

Ronald J Christopher

Tohru Murata

Paul Covington

Tadahiro Iwasaki

Masayuki Hiyoshi

Kinya Fujimoto

Akio Aioi

Koichi Hirata

Akira Tsuruta

Takashi Unobe

Takaharu Kanai

Shoichi Matsugami

Takako Shimizu

Yuuki Itou

Akiyoshi Ohya

Hiroyuki Naganuma

Manabu Tohsaki

Takeshi Funaki

Hitoshi Ozasa

Tomonobu Kodama

The present invention provides a mirror display that has improved design aesthetics and makes it possible to sufficiently improve visibility in mirror mode in dark environments. The mirror display according to the present invention includes a half mirror plate having a half mirror layer, a display device, a case, and an auxiliary illumination unit that includes an auxiliary light source. The case supports at least the half mirror plate and the display device and includes an outer frame that covers an edge of a front surface of the half mirror plate when viewed in a plan view from a viewing side. The display device is arranged on a rear side of the half mirror plate. The auxiliary light source is arranged on the rear side of the half mirror plate, the display device, or the outer frame. The auxiliary illumination unit is controlled separately from the display device and emits light towards the viewing side when the mirror display is in mirror mode. As measured on the viewing side, a brightness of the light emitted from the auxiliary illumination unit is greater than a brightness of the display device when the display device is in a white display state.

Mirror display

According to a method of the present invention for controlling display of a menu screen, content is displayed in a content display region located in a central part of a display screen in a size smaller than the display screen, and a plurality of icons are displayed in a circle around the content display region so that the plurality of icons sequentially move to a specific position in accordance with a user's selecting operation while moving around the content display region without overlapping the content display region.

Menu screen display control method and display control device for exchanging icons of a menu based on user instruction

A nitride compound semiconductor has a substrate and a nitride compound semiconductor stack on the substrate. The nitride compound semiconductor stack includes a multilayer buffer layer, a channel layer on this multilayer buffer layer, and an electron supply layer on this channel layer. A recess extends from the surface of the electron supply layer through the channel layer and the multilayer buffer layer. A heat dissipation layer in this recess is contiguous to the multilayer buffer layer and the channel layer and has a higher thermal conductivity than the multilayer buffer layer.

Nitride compound semiconductor

According to this GaN-based HFET, resistivity &#x3c1; of a semi-insulating film forming a gate insulating film is 3.9&#xd7;10&#x3a9;cm. The value of this resistivity &#x3c1; is a value derived when the current density is 6.25&#xd7;10(A/cm). By inclusion of the gate insulating film by a semi-insulating film having a resistivity &#x3c1;=3.9&#xd7;10&#x3a9;cm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1 &#xd7;10&#x3a9;cm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1 &#xd7;10&#x3a9;cm.

Nitride semiconductor

A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element

Pharmaceutical compositions and methods comprising 2-[6-(3-Amino-piperidin-1-yl)-3-methyl-2,4-dioxo-3,4-dihydro-2H-pyrimidin-1-ylmethyl]-4-fluoro-benzonitrile or a pharmaceutically acceptable salt thereof administered once weekly.

Administration of dipeptidyl peptidase inhibitors

A television receiver for content with which genre information is associated includes: a basic picture quality information receiving section which associates, with a single piece of genre information, a plurality of candidates for picture quality information regarding the content with which the genre information is associated, and which receives basic picture quality information indicating which one of the plurality of candidates is based on; a picture quality correction information creating section which receives picture quality correction information for further correcting the picture quality, and which creates, in accordance with the basic picture quality information and the picture quality correction information, information for correcting the picture quality; and a picture processing section which corrects the picture quality and which creates a picture to be displayed by a liquid crystal display device.

Display device, program and computer readable storage medium on which said program is stored

Pharmaceutical compositions comprising 2-[6-(3-Amino-piperidin-1-yl)-3-methyl-2,4-dioxo-3,4-dihydro-2H-pyrimidin-1-ylmethyl]-4-fluoro-benzonitrile and pharmaceutically acceptable salts thereof are provided as well as kits and articles of manufacture comprising the pharmaceutical compositions as well as methods of using the pharmaceutical compositions.

Weekly administration of dipeptidyl peptidase inhibitors

In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer () held between an n-type nitride semiconductor layer () and a p-type nitride semiconductor layer (to) on a substrate (), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

Method of producing nitride semiconductor light-emitting device using a surfactant material

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source

A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

Nitride semiconductor light-emitting device providing efficient light extraction

Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the growth of an active layer, or, with a grown crystal surface during or after the growth of the active layer. According to this manufacturing method, a nitride semiconductor light-emitting device having higher light-emitting efficiency can be obtained.

Method of manufacturing nitride semiconductor light-emitting device

A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Method for manufacturing laser devices

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

Growing community of inventors

Osaka, Japan

Atsushi Ogawa