Fujifilm Corporation

Nisshinbo Industries, Inc.

Samsung Electronics Co., Ltd.

Koito Manufacturing Company, Ltd.

Atsushi Nakamura

Yu Iwai

Keita Kato

Yoshitaka Kamochi

Ichiro Koyama

Hidenori Takahashi

Kaoru Iwato

Michihiro Shirakawa

Tadahiro Odani

Mitsuru Sawano

Kazuo Sato

Dong-jun Lee

Shiro Tan

Hisayoshi Daicho

Kazuhiro Fujimaki

Yool Kang

Jae-ho Kim

Atsuyasu Nozaki

Takeshi Iwasaki

Masafumi Yoshida

Hyung-rae Lee

Si-Young Lee

Pawel Malinowski

Seiya Masuda

Naoki Sato

Suk-Koo Hong

Misaki Takashima

A method of manufacturing a scintillator material includes providing a substrate made of a quartz glass and having a recess formed therein; filling the recess with a raw material powder obtained by mixing an iodide raw material and SiOfine particles; after filling the recess, disposing a lid on the substrate to cover the recess; and after disposing the lid, heating the substrate, thereby forming a nanocomposite layer in which an iodide phosphor is introduced into a cristobalite structure.

Manufacturing method of scintillator material and scintillator material

There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance. The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

Manufacturing method for cured substance, manufacturing method for laminate, and manufacturing method for semiconductor device, and treatment liquid

Provided are a laminate which includes an organic semiconductor film, a water-soluble resin layer, and a photosensitive resin layer and in which cracks are unlikely to occur; and a kit. The laminate includes a water-soluble resin layer containing a water-soluble resin and a photosensitive resin layer containing a photosensitive resin, which are provided in this order on an organic semiconductor film. The water-soluble resin layer and the photosensitive resin layer are adjacent to each other, the water-soluble resin is at least one of polyvinylpyrrolidone having a weight-average molecular weight of 300,000 or greater or polyvinyl alcohol having a weight-average molecular weight of 15,000 or greater, and the photosensitive resin has a weight-average molecular weight of 30,000 or greater.

Laminate and kit

Provided are a kit and a laminate which are capable of suppressing residues derived from a temporary adhesive in manufacture of a semiconductor. The kit for manufacturing a semiconductor device includes a composition which contains a solvent A; a composition which contains a solvent B; and a composition which contains a solvent C, in which the kit is used when a temporary adhesive layer is formed on a first substrate using a temporary adhesive composition containing a temporary adhesive and the solvent A, at least some of an excessive amount of the temporary adhesive on the first substrate is washed using the composition containing the solvent B, a laminate is manufactured by bonding the first substrate and a second substrate through the temporary adhesive layer, one of the first substrate and the second substrate is peeled off from the laminate at a temperature of lower than 40&#xb0; C., and then the temporary adhesive remaining on at least one of the first substrate or the second substrate is washed using the composition containing the solvent C, and the solvent A, the solvent B, and the solvent C respectively satisfy a predetermined vapor pressure and a predetermined saturated solubility.

Kit and laminate

Provided are a composition which has good elastomer solubility, is thus capable of increasing a concentration of solid contents, and is capable of forming a film having excellent drying properties, surface morphology, and heat resistance, a process for producing a sheet, a sheet, a laminate, and a laminate with a device wafer. This composition includes an elastomer having a 5% thermal mass reduction temperature of 375&#xb0; C. or higher when heated at an elevation rate of 20&#xb0; C./min from 25&#xb0; C., a solvent represented by the following General Formula (1) and having a boiling point of 160&#xb0; C. or higher, and a solvent having a boiling point of lower than 120&#xb0; C. In General Formula (1), Rto Reach independently represent a hydrogen atom or an aliphatic hydrocarbon group. 

Composition, process for producing sheet, sheet, laminate, and laminate with device wafer

A laminate includes, sequentially and adjacent to each other: a first base material; a temporary adhesion film; and a second base material, in which the tensile elastic modulus E of the temporary adhesion film at 25&#xb0; C. in conformity with JIS K 7161:1994 is in a range of 25 to 2000 MPa. A base material is peeled off by fixing any one of the first base material and the second base material of the laminate at 25&#xb0; C. and pulling an end portion of the other base material up in a direction perpendicular to the surface of the other base material from an interface with the temporary adhesion film at a speed of 50 mm/min, and the force applied during the pulling is measured using a force gauge and the value is 0.33 N/mm or less.

Laminate for treatment of a wafer device, temporary adhesion composition, and temporary adhesion film

A method is provided for photolithographic patterning of an organic layer, comprising: providing a shielding layer on the organic layer; providing a photoresist layer on the shielding layer; illuminating the photoresist layer through a shadow mask; developing the photoresist layer, thereby forming a patterned photoresist layer; performing a first dry etching step using the patterned photoresist layer as a mask, thereby removing at least an upper portion of the photoresist layer and completely removing the shielding layer at locations not covered by the photoresist layer; performing a second dry etching step using the patterned shielding layer as a mask, thereby removing the organic layer at locations not covered by the shielding layer; and removing the shielding layer, wherein removing the shielding layer comprises exposing it to water. A method of the present disclosure may advantageously be used in a process for fabricating organic semiconductor based devices and circuits.

Method for lithographic patterning of organic layers

There is provided a laminate body which is capable of forming an excellent pattern on an organic semiconductor. A laminate body includes at least a water-soluble resin film and a resist film formed of a chemically amplified photosensitive resin composition on a surface of an organic semiconductor film in this order, in which the chemically amplified photosensitive resin composition contains a photoacid generator which is decomposed in an amount of 80% by mole or greater when exposed to light under the condition of 100 mJ/cmor greater at a wavelength of 365 nm, a mask pattern is formed by an exposed portion being hardly soluble in a developer containing an organic solvent, and the formed mask pattern is used as an etching mask.

Laminate body

There is provided a resin composition for use in formation of a protective film to protect a substrate or a film formed on the substrate, from a developer containing an organic solvent to be used for development in pattern formation, and which contains two or more kinds of resins in which their main chain structures having a hydroxyl group are different, and contains water, a pattern forming method using the resin composition, and layered products comprising a substrate, an organic semiconductor film on the substrate, and a protective film comprising two or more kinds of resins in which their main chain structures having a hydroxyl group are different, on the organic semiconductor film.

Resin composition for forming protective film, protective film, pattern forming method, method for manufacturing electronic device, and electronic device

A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device

There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation or heat, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching a first surface of the treated member from the adhesive layer of the adhesive support, wherein the irradiation of the adhesive layer with an actinic ray, radiation or heat is conducted so that adhesiveness decreases toward an outer surface from an inner surface on the substrate side of the adhesive layer.

Manufacturing method of semiconductor device

Provided is a method of forming a pattern, including forming an actinic-ray- or radiation-sensitive resin composition into a film, the actinic-ray- or radiation-sensitive resin composition including a resin (A) including a repeating unit containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and including an aromatic group, which resin when acted on by an acid, decreases its solubility in an organic solvent, a nonionic compound (B) that when exposed to actinic rays or radiation, generates an acid and a solvent (C), exposing the film to actinic rays or radiation, and developing the exposed film with a developer including an organic solvent to thereby form a negative pattern.

Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film

A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, manufacturing method of electronic device, and electronic device

Growing community of inventors

Shizuoka, Japan

Atsushi Nakamura