Tokyo Electron Limited

Ckd Corporation

Atsushi Kobayashi

Keiichi Nishikawa

Takahiro Minatani

Yasuhisa Hirose

Kazutoshi Itoh

Hideki Wakai

Atsuhiko Tabuchi

Takashi Kitazawa

Kazuyuki Miura

Kazuyuki Tezuka

Akira Yasumuro

A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.

Temperature control system, semiconductor manufacturing device, and temperature control method

A semiconductor manufacturing apparatus is capable of reducing power consumption. The semiconductor manufacturing apparatusincludes a processing chamberthat has a top surfaceand forms a processing space S therein; a mounting tableprovided in the processing space S; an upper electrodeprovided above the mounting tableto face the mounting table; heatersandprovided around the upper electrodeand below the top surfaceof the processing chamberand configured to heat the upper electrode; and a heat insulating unit, mounted on the top surfaceof the processing chamber, having a plate-shaped memberand a heat insulating memberthat is provided on one main surfaceof the plate-shaped member

Semiconductor manufacturing apparatus

A leak rate measuring method measures a leak rate of a vacuum apparatus including a vacuum chamber in which an object is accommodated to be processed, a first gas exhaust pump connected to the vacuum chamber via a first valve serving as a conductance variable valve, and a second valve connected to a downstream side of the first gas exhaust pump in a gas flowing direction. In the leak rate measuring method, there is provided a circulating path branched from a gas exhaust path between the first gas exhaust pump and the second valve and connected to the vacuum pump to communicate therewith. The pressure inside the vacuum chamber is monitored by circulating a gas into the vacuum chamber through the circulating path with first gas exhaust pump under the condition that the first valve is set at a predetermined conductance and the second valve is closed.

Vacuum apparatus

Growing community of inventors

Miyagi, Japan

Atsushi Kobayashi