Mitsubishi Materials Corporation

Atsushi Itsuki

Katsumi Ogi

Hiroto Uchida

Taiji Tachibana

Nobuyuki Soyama

Akio Yanagisawa

Kazuo Wakabayashi

A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same

The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 30 ppm or less. In addition, the general formula of this compound is represented by the following formula (1):[()]()&#x2003;&#x2003;(1)

Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the same

The present invention provides a solution suitable for forming a composite oxide type dielectric thin film containing at least one organometallic compound dissolved in at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, and acetoacetic esters, or dissolved in a solvent mixture comprising at least one solvent selected from the group consisting of cyclic and acyclic saturated hydrocarbons, and at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, acetoacetic esters, and unsubstituted or alkyl-substituted pyridine. These solutions can be used in a metal oxide chemical deposition method (a MOCVD method, a chemical vapor deposition method using an organometallic compound) to prepare composite oxide (for example, barium strontium titanate) type dielectric thin films on substrates.

Solution raw material for forming composite oxide type dielectric thin film and dielectric thin film

Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Organic titanium compound suitable for MOCVD

An organic copper compound is provided that is represented by the following formula (1) in which monovalent copper is coordinated with a &bgr;-diketone compound and an unsaturated hydrocarbon compound having a silyloxy group:

Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solution

Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Two types of high-purity Ti complexes, �TiO(DPM: dipivaloylmethane).sub.2 !.sub.2 and cis-Ti(O-t-Bu).sub.2 (DPM).sub.2, and BST film-forming liquid compositions comprising solutions of either of the two types of high-purity Ti complexes and Ba(DPM).sub.2 and/or Sr(DPM).sub.2 in organic solvents can be used to form BST films. Crystals of the former complex are produced by adding purified water to a solution of TiCl.sub.2 (DPM).sub.2 in an organic solution, adding an alkali chemical to the solution to adjust the pH to 6.0-8.0 to thereby produce turbidity, and separating the organic layer which is then washed with water and heated to reflux. Crystals of the latter complex is produced by adding HDPM to a solution of Ti(O-t-Bu).sub.4 in an organic solvent, and heating the solution to reflux.

High-purity TI complexes, methods for producing the same and BST

A Pt film-forming composition comprises a dimethyl Pt(II) (N,N,N',N'-tetramethylethylenediamine) complex and an organic solvent. A Pt film is formed by applying this composition to a substrate and then subjecting the applied layer of the composition to a heat treatment. A Pt film pattern is obtained by applying this composition to a substrate, pattern-exposing the produced applied layer of the composition to radiation, developing the exposed layer, and then subjecting the developed layer to a heat treatment.

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Saitama, Japan

Atsushi Itsuki