Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Kokusa Electric Corporation

Atsuro Seino

Arito Ogawa

Atsuhiko Ashitani

Masanori Sakai

Yukinao Kaga

Koei Kuribayashi

Takuya Joda

Ryohei Maeno

Norikazu Mizuno

Kota Kowa

Yutaka Matsuno

There is provided a technique that includes: (a) supplying a first gas containing hydrogen and oxygen to a substrate in a process chamber; (b) supplying a second gas containing nitrogen and hydrogen to the substrate; (c) supplying a third gas containing a halogen element to the substrate; (d) supplying a reaction gas to the substrate; (e) performing (a) and (b); and (f) forming a film on the substrate by performing (c) and (d) after performing (e).

Method of processing substrate, recording medium, and substrate processing apparatus

There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes (a) supplying a precursor gas containing a first element and halogen to a substrate; (b) supplying a first reducing gas to the substrate; (c) supplying a second reducing gas to the substrate; and (d) supplying the precursor gas to the substrate, wherein the technique further includes: (e) starting (b) during (a) and ending (a) during (b); (f) performing (d) after (e) without purging between (e) and (d); (g) performing (c) after (f); and (h) forming a film containing the first element on the substrate by performing (e), (f), and (g) sequentially in this order a predetermined number of times.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

There is provided a technique that includes: (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.

There are included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.

Method of manufacturing semiconductor device, substrate processing apparatus, method of processing substrate, and recording medium

There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.

Method of processing substrate, recording medium, substrate processing apparatus, and method of manufacturing semiconductor device

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

Method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.

A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.

Method of manufacturing semiconductor device

A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.

Growing community of inventors

Toyama, Japan

Atsuro Seino