Fujimi Incorporated

Fujima Incorporated

Atsunori Kawamura

Shirou Miura

Kenji Sakai

Hitoshi Kodama

Tatsuhiko Hirano

Noritaka Yokomichi

Satoshi Suzumura

Tsuyoshi Matsuda

Hideki Otake

Junhui Oh

Masatoki Ito

Kazusei Tamai

Masayuki Hattori

Katsunobu Hori

To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it. A polishing composition comprising an anionic surfactant and a nonionic surfactant, characterized in that the composition is prepared so that the water contact angle of the surface of an object to be polished, after being polished by the composition, would be at most 60&#xb0;. Particularly, a polishing composition having a pH of from 2 to 9 and comprising at least one anionic surfactant represented by the chemical formula R1-Y1' or R1-X1-Y1&#x2032;, wherein R1 is an alkyl group, an alkylphenyl group or an alkenyl group, X1 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and Y1&#x2032; is a SOM1 group or a SOM1, wherein M1 is a counter ion, a protection film forming agent different from the anionic surfactant, and at least one nonionic surfactant represented by the chemical formula R2-X2, wherein R2 is an alkyl group, and X2 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and having a HLB value of from 10 to 16.

Polishing composition and polishing process

A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.

Polishing composition and polishing method

A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

Polishing composition

A polishing composition comprising silicon nitride fine powder, water and an acid.

A polishing composition comprising fumed silica, a basic potassium compound and water, of which the specific electric conductivity is from 100 to 5,500 .mu.S/cm.

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Owariasahi, Japan

Atsunori Kawamura