Hitachi High-tech Corporation

Hitachi, Ltd.

Atsuko Shintani

Hiroki Kawada

Masami Ikota

Kazuhisa Hasumi

Yasunari Sohda

Makoto Suzuki

Momoyo Enyama

Makoto Sakakibara

Noritsugu Takahashi

Takeyoshi Ohashi

Takafumi Miwa

Minseok Park

Yasuhiro Shirasaki

Hirokazu Tamaki

Kotoko Urano

Takahiro Kawasaki

Takashi Dobashi

Sayaka Kurata

Akiko Kagatsume

Thantip Krasienapibal

Hikaru Koyama

System and method for preventing blurring of an image in a scanning direction caused by a signal processing delay of a detector. of a charged particle beam device. The charged particle beam device is configured to calibrate first image data generated based on a detection signal output from a detector when the sample is two-dimensionally scanned with the charged particle beam, to generate second image data, in which the the second image data is generated using n first signal profiles each of which corresponds to a signal strength distribution in a first direction and which are extracted from the first image data, and a power spectral density P(f) (f: spatial frequency) of a window function corresponding to the signal processing delay of the detector.

Charged particle beam device and inspection device

Line-edge roughness or line width roughness is evaluated while preventing influence of noise caused by a device or an environment. Therefore, an averaged signal profilein which a moving average of S pixels (S is an integer greater than 1) is taken in a Y direction is obtained from a signal profile showing a secondary electron signal amount distribution in an X direction with respect to a predetermined Y coordinate obtained from a top-down image, an edge positionof a line pattern is extracted based on the averaged signal profile, and a noise floor height is calculated based on a first power spectral densityof LER data or LWR data based on the extracted edge position and a second power spectral densityof a rectangular window function corresponding to the moving average of the S pixels.

Pattern shape evaluation device, pattern shape evaluation system, and pattern shape evaluation method

An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (), undergrowth and overgrowth is determined (). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated ().

Image processing device, image processing method and charged particle microscope

A measurement system comprising: a measurement apparatus observing a sample based on an observation condition including parameters; and an observation condition database storing data in which a search key related to the sample and the observation condition, a control unit calculating information on an observation condition of a sample is configured to: receive an observation condition search request including a search key related to a target sample; refer the observation condition database to search for the first data matching or similar to the search key related to the target sample included in the observation condition search request, calculate, based on the searched first data, a candidate observation condition of the measurement apparatus for observing the target sample, and output display data for presenting the candidate observation condition.

Measurement system and method for setting observation conditions of measurement apparatus

An inspection device includes a charged particle optical system that includes a charged particle beam source emitting a charged particle beam and plural lenses focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by an interaction of the charged particle beam and the sample, and a calculation unit that executes auto-focusing at a time a field of view of the charged particle optical system moves over plural inspection spots, the calculation unit irradiates the charged particle beam to the sample under an optical condition that is obtained by introducing astigmatism of a predetermined specification to an optical condition that is for observing a pattern by the charged particle optical system, and executes the auto-focusing using an image formed from a signal outputted by the detector in detecting the secondary charged particles.

Inspection device

Growing community of inventors

Tokyo, Japan

Atsuko Shintani