Sharp Kabushiki Kaisha Corporation

Atsuko Ogura

Mitsuhiro Shigeta

Katsuki Furukawa

Yoshihisa Fujii

Kenji Nakanishi

Akira Suzuki

A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.

Silicon carbide semiconductor device

A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disposed thereon. The metal layer is biased with a negative voltage so that the capacitance between the metal layer and the semiconductor layer changes in response to whether on the metal layer is illuminated with light.

Growing community of inventors

Nara, Japan

Atsuko Ogura