Applied Materials, Inc.

University of California

Appled Materials, Inc.

Atif Noori

Mei Yin Chang

Srinivas Gandikota

David P Thompson

Seshadri Ganguli

Xinliang Lu

Xinyu Fu

Shih Chung Chen

Wei V Tang

Jeffrey W Anthis

Avgerinos V Gelatos

Maitreyee Mahajani

Steve G Ghanayem

Li-Qun Xia

Mihaela A Balseanu

Reza Arghavani

Yu Lei

Amir Hamed Al-Bayati

Derek R Witty

Vladimir Zubkov

Khaled Ahmed

Dien-Yeh Wu

Andrew C Kummel

Faruk Gungor

Steven C Hung

Mary Edmonds

Jing Zhou

Prabu Gopalraja

David K Carlson

Hyungjun Kim

Swaminathan T Srinivasan

David Michael Thompson

Yoshihide Senzaki

Woo-Hee Kim

Min-Kyu Kim

Wei Tang

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WClor WCl.

Methods for depositing fluorine/carbon-free conformal tungsten

Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

Deposition of films comprising aluminum alloys with high aluminum content

Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50&#xb0; C. and 300&#xb0; C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si&#x2014;H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si&#x2014;H and Si&#x2014;OH.

Self-limiting chemical vapor deposition and atomic layer deposition methods

Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing

Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under 'load lock' conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

Devices including metal-silicon contacts using indium arsenide films and apparatus and methods

Described are methods for atomic layer deposition of films comprising mixed metal oxides using metal amidinate precursors. The mixed metal oxide films may comprise a lanthanide and a transition metal such as hafnium, zirconium or titanium. Such mixed metal oxide films may be used as dielectric layers in capacitors, transistors, dynamic random access memory cells, resistive random access memory cells, flash memory cells and display panels.

Methods of fabricating dielectric films from metal amidinate precursors

Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaC.

N-metal film deposition with initiation layer

Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl, TaCland HfClto provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)AlH], wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Deposition of N-metal films comprising aluminum alloys

Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.

Atomic layer deposition methods for metal gate electrodes

Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Methods for manufacturing metal gates

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Saratoga, CA, United States of America

Atif Noori