Air Liquide America, L.p.

Air Liquide Electronics U.S. LP

Texas Instruments Corporation

Other

L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

American Air Liquide, Inc.

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Ashutosh Misra

Matthew L Fisher

Ravi Kumar Laxman

Jean-Marc Girard

Ziyun Wang

Lindsey H Hall

Jennifer A Sees

Benjamin Jurcik

David L Snyder

Bin Xia

Jagdish Prasad

Christian Dussarrat

Joe G Hoffman

Zhiwen Wan

Andrey V Korolev

Benjamin J Jurcik, Jr

Anthony J Schleisman

Eri Tsukada

Ravi Laxman

Si(OEt)[CH&#x2014;Si(OEt)]compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)(CHMgCl) with a quenching agent having the formula Si(OEt)Cl.

Synthesis method for carbosilanes

Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Methods for forming a ruthenium-based film on a substrate

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500&#xb0; C. In addition, embodiments of the silicon precursors incorporate a &#x2014;Si&#x2014;Y&#x2014;Si&#x2014; bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R, R, R, and Rare each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R, R, R, and Rmay be the same or different from one another; X, X, X, and Xare each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X, X, X, and Xmay be the same or different from one another.

Silicon precursors and method for low temperature CVD of silicon-containing films

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500&#xb0; C. In addition, embodiments of the silicon precursors incorporate a &#x2014;Si&#x2014;Y&#x2014;Si&#x2014; bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R, R, R, and Rare each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R, R, R, and Rmay be the same or different from one another; X, X, X, and Xare each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X, X, X, and Xmay be the same or different from one another.

A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

Chemical storage device with integrated load cell

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide

Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.

Method for forming dielectric or metallic films

Alkaline chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Acidic chemistry for Post-CMP cleaning using a composition comprising mercaptopropionic acid

Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.

Alkylsilanes as solvents for low vapor pressure precursors

This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range. Furthermore, the vapor phase silicon precursor, liquid phase metal precursor, nitrogen source and oxygen sources are chlorine free, eliminating the undesirable effects chlorine in the dielectric film and chloride by products in the reaction chamber and exhaust system. Furthermore, the vapor phase silicon precursor, nitrogen source and oxygen sources are carbon free, minimizing the incorporation of carbon in the dielectric film.

Method for novel deposition of high-k MSiON dielectric films

Acidic chemistry for post-CMP cleaning

Provided are methods and systems for controlling the concentration of a component in a composition, and semiconductor processing methods and systems. One exemplary method of controlling the concentration of a component in a composition involves: providing a composition which has a liquid portion, wherein the liquid portion contains a component to be monitored; performing an absorption spectroscopy measurement on a sample of the composition; and controlling the concentration of the component in the composition based on the absorption spectroscopy measurement using a feedback control loop. The invention allows for controlling the concentration of a component in a composition, for example, a corrosion inhibitor in a chemical planarization (CMP) chemical, as well as in pre- and post-CMP storage/treatment chemicals, and can provide real time, accurate process control in a simple and robust manner.

Growing community of inventors

Plano, TX, United States of America

Ashutosh Misra