Disco Corporation

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

Asahi Nomoto

Kazuya Hirata

Kunimitsu Takahashi

Masatake Nagaya

Teruaki Kumazawa

Yujiro Sudo

Yuji Nagumo

An ingot is processed by applying exciting light, and detecting fluorescence occurring from an upper surface of the ingot. A distribution of the number of photons of the fluorescence on the upper surface of the ingot is stored as two-dimensional data in association with XY coordinate positions, and a Z-coordinate position at which the two-dimensional data is obtained is also stored. A laser beam forms a peeling layer by irradiating the ingot while positioning the condensing point of the laser beam at a depth corresponding to the thickness of a wafer from the upper surface of the ingot. A wafer is separated from the ingot with the peeling layer as a starting point, and three-dimensional data is generated representing the distribution of the number of photons of the fluorescence in the whole of the ingot on the basis of two-dimensional data at each Z-coordinate position of the ingot.

Processing method and processing apparatus for ingot

A wafer having a first surface, an opposite second surface, and an outer circumferential surface that includes a curved part curved outward in a protruding manner is separated into two wafers. Part of the wafer is removed along the curved part, and a separation origin is formed inside the wafer by positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the wafer inside the wafer and executing irradiation with the laser beam while the focal point and the wafer are relatively moved in such a manner that the focal point is kept inside the wafer. The wafer is separated into two wafers by an external force.

Separation method of wafer

A method of manufacturing a chip formation wafer includes: forming an epitaxial film on a first main surface of a silicon carbide wafer to provide a processed wafer having one side adjacent to the epitaxial film and the other side; irradiating a laser beam into the processed wafer from the other side of the processed wafer so as to form an altered layer along a surface direction of the processed wafer; and separating the processed wafer with the altered layer as a boundary into a chip formation wafer having the one side of the processed wafer and a recycle wafer having the other side of the processed wafer. The processed wafer has a beveling portion at an outer edge portion of the processed wafer, and an area of the other side is larger than an area of the one side in the beveling portion.

Processed wafer and method of manufacturing chip formation wafer

A diamond substrate producing method includes a belt-shaped separation layer forming step of applying a laser beam to a diamond ingot as relatively moving the ingot and a focal point of the laser beam in a [110]-direction perpendicular to a (110)-plane, thereby forming a belt-shaped separation layer extending in the [110]-direction inside the ingot, an indexing step of relatively moving the ingot and the focal point in an indexing direction parallel to a (001)-plane and perpendicular to the [110]-direction, a planar separation layer forming step of repeating the belt-shaped separation layer forming step and the indexing step to thereby form a planar separation layer parallel to the (001)-plane inside the ingot, the planar separation layer being composed of a plurality of belt-shaped separation layers arranged side by side in the indexing direction, and a separating step of separating a substrate from the diamond ingot along the planar separation layer.

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Tokyo, Japan

Asahi Nomoto