General Electric Company

Ge Aviation Systems Limited

Ge Intellectual Property Licensing, LLC

Arun Virupaksha Gowda

Paul Alan McConnelee

Shakti Singh Chauhan

Risto Ilkka Tuominen

Richard Alfred Beaupre

Christopher James Kapusta

James Wilson Rose

Kevin Matthew Durocher

David Richard Esler

Kanakasabapathi Subramanian

Donald Paul Cunningham

Gamal Refai-Ahmed

Thomas Bert Gorczyca

Raymond Albert Fillion

Christopher Fred Keimel

Brian Magann Rush

Marco Francesco Aimi

Kaustubh Ravindra Nagarkar

David Mulford Shaddock

John Anthony Vogel

Ryan Christopher Mills

Nancy Cecelia Stoffel

Richard Anthony Eddins

Liqiang Yang

Jian Zhang

Sandeep Shrikant Tonapi

Paul Jeffrey Gillespie

Paul Alan Mcconnelee

William James Premerlani

Stanton Earl Weaver, Jr

Om Prakash

Slawomir Rubinsztajn

Antonio Caiafa

Joseph Alfred Iannotti

Deborah Ann Haitko

Glenn Scott Claydon

Ahmed Elasser

John Norton Park

Eladio Clemente Delgado

Ljubisa Dragoljub Stevanovic

Reed Roeder Corderman

Weijun Yin

Kathleen Ann O'Brien

Ri-an Zhao

Donald Joseph Buckley

Scott Sheridan Smith

Brian Lynn Rowden

David Cecil Hays

Oliver Charles Boomhower

Russell William Craddock

Stephen Adam Solovitz

Christian M Giovanniello

Judd Everett Swanson

Paulo Meneghetti

Owen Jannis Samuel Schelenz

Sudhakar Reddy

Liang Yin

Christian Michael Giovanniello, Jr

Elizabeth Ann Burke

Satish Sivarama Gunturi

Hong Zhong

Gregory W Shaffer

Paul Joseph Hans

Rinaldo Luigi Miorini

Duraiswamy Srinivasan

Somasundaram Gunasekaran

Laurence Maniccia

Naveenan Thiagarajan

Jianjun Jiang

Ljubisa Dragol Jub Stevanovic

Paul Alan Mc Connelee

Risto Llkka Tuominen

Oliver Charles Boomhoower

Jennifer David

Hollister Victor

Sara Naomi Paisner

Robert Fortuna

Gregory A Strosaker

The disclosure relates to an apparatus for connecting an electronic component to a conductor. A housing includes at least one slot and defines at least one component chamber for carrying the electronic component. A liquid coolant can pass through the housing. A pair of conductive members extends from the housing through the at least one slot and can be releasably inserted into a channel defined in a support assembly. The support assembly facilitates an electrical connection between the conductive members and corresponding conductive contact members connected to a respective power supply or electrical load. The support assembly can provide an inward sealing force to a seal on the housing circumscribing the pair of conductive members.

Electronic connection assembly

A power overlay (POL) module includes a semiconductor device having a body, including a first side and an opposing second side. A first contact pad defined on the semiconductor device first side and a dielectric layer, having a first side and an opposing second side defining a set of first apertures therethrough, is disposed facing the semiconductor device first side. The POL module, includes a metal interconnect layer, having a first side and an opposing second side, the metal interconnect layer second side is disposed on the dielectric layer first side) and extends through the set of first apertures to define a set of vias electrically coupled to the first contact pad. An enclosure defining an interior portion is coupled to the metal interconnect layer first side, and a phase change material (PCM) is disposed in the enclosure interior portion.

Power overlay module with thermal storage

A semiconductor device package comprises a semiconductor switching device having a body, including a first side, and an opposing second side coupled to a substrate. A gate terminal is defined on the semiconductor switching device body first side, the gate terminal having a first side, and an opposing second side facing the semiconductor switching device body. A first gate resistor is disposed on the gate terminal first side, and coupled electrically in series with the gate terminal.

Semiconductor device package and method of forming

A package structure includes a first dielectric layer, semiconductor device(s) attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein, the embedding material comprising one or more additional dielectric layers. Vias are formed through the first dielectric layer to the at least one semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on one or more outward facing surfaces thereof to provide a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicular to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.

Ultra-thin embedded semiconductor device package and method of manufacturing thereof

A power overlay (POL) module includes a semiconductor device having a first side and an opposing second side, a dielectric sheet having a first side coupled to the semiconductor device second side, and an opposing second side, the dielectric sheet defining an aperture therethrough. The POL module also includes a first conductive layer disposed on the second side of the dielectric sheet and electrically coupled through the aperture to the semiconductor device second surface, a first conductive plate having a first side, and an opposing second side coupled to the first surface of the semiconductor device. The POL module further includes a first heat sink coupled the first side of the conductive plate and a first thermal interface layer disposed between the first conductive plate and the first heat sink.

Power overlay module and method of assembling

An electronics package is disclosed herein that includes a glass substrate having an exterior portion surrounding an interior portion thereof, wherein the interior portion has a first thickness and the exterior portion has a second thickness larger than the first thickness. An adhesive layer is formed on a lower surface of the interior portion of the glass substrate. A semiconductor device having an upper surface is coupled to the adhesive layer, the semiconductor device having at least one contact pad disposed on the upper surface thereof. A first metallization layer is coupled to an upper surface of the glass substrate and extends through a first via formed through the first thickness of the glass substrate to couple with the at least one contact pad of the semiconductor device.

Power electronics package and method of manufacturing thereof

An electronics package includes an insulating substrate, a first electrical component coupled to a first surface of the insulating substrate, and a first conductor layer formed on the first surface of the insulating substrate. A second conductor layer is formed on a second surface of the insulating substrate, opposite the first surface, the second conductor layer extending through vias in the insulating substrate to contact at least one contact pad of the first electrical component and couple with the first conductor layer. The electronics package also includes a second electrical component having at least one contact pad coupled to the first conductor layer. The first conductor layer has a thickness greater than a thickness of the second conductor layer.

Electronics package having a multi-thickness conductor layer and method of manufacturing thereof

An electronics package includes an insulating substrate, a first electrical component coupled to a bottom surface of the insulating substrate, and a first conductor layer formed adjacent the bottom surface of the insulating substrate. The electronics package also includes a second conductor layer formed on a top surface of the insulating substrate and extending through a plurality of vias in the insulating substrate to electrically couple with the first electrical component and the first conductor layer. A second electrical component is electrically coupled to the first conductor layer and the first electrical component and the second electrical component are positioned in a stacked arrangement.

Stacked electronics package and method of manufacturing thereof

An electronic packaging assembly having a semiconductor integrated circuit and a plurality of interconnect components is provided. The plurality of interconnect components is operatively coupled to the semiconductor integrated circuit. Further, one or more interconnect components include one or more support elements having a first surface and a second surface, and one or more spring elements having a first end and a second end, and wherein first ends of the one or more spring elements are coupled to the first surface or the second surface of a respective support element.

Interconnect devices for electronic packaging assemblies

An electronics package includes an interconnect assembly comprising a first insulating substrate, a first wiring layer formed on a lower surface of the first insulating substrate, and at least one through hole extending through the first insulating substrate and the first wiring layer. The electronics package also includes an electrical component assembly comprising an electrical component having an active surface coupled to an upper surface of the first insulating substrate opposite the lower surface. The active surface of the electrical comprises at least one metallic contact pad. At least one conductive stud is coupled to the at least one metallic contact pad and is positioned within the at least one through hole. A conductive plug contacts the first wiring layer and extends into the at least one through hole to at least partially surround the at least one conductive stud.

Electronics package having a self-aligning interconnect assembly and method of making same

An electronics package includes an insulating substrate and electrical components coupled to a first surface of the insulating substrate. A multi-thickness conductor layer is formed on a second surface of the insulating substrate opposite the first surface. The multi-thickness conductor layer extends through vias in the insulating substrate to connect with contact pads of the electrical components. The multi-thickness conductor layer has a first thickness in a region proximate the first electrical component and a second thickness in a region proximate the second electrical component, the first thickness greater than the second thickness. The electronics package also includes a first redistribution layer having a conductor layer formed atop a portion of the multi-thickness conductor layer having the second thickness. A top surface of the conductor layer is co-planar with or substantially co-planar with a top surface of a portion of the multi-thickness conductor layer having the first thickness.

An electronics package includes an insulating substrate, a first electrical component coupled to a top surface of the insulating substrate, and a second electrical component coupled to a bottom surface of the insulating substrate. A first conductor layer is formed on the bottom surface of the insulating substrate and extends through a via formed therethrough to contact a contact pad of the first electrical component, with a portion of the first conductor layer positioned between the insulating substrate and the second electrical component. A second conductor layer is formed on the top surface of the insulating substrate and extends through another via formed therethrough to electrically couple with the first conductor layer and to contact a contact pad of the second electrical component.

A semiconductor device module includes a dielectric layer, a semiconductor device having a first surface coupled to the dielectric layer, and a conducting shim having a first surface coupled to the dielectric layer. The semiconductor device also includes an electrically conductive heatspreader having a first surface coupled to a second surface of the semiconductor device and a second surface of the conducting shim. A metallization layer is coupled to the first surface of the semiconductor device and the first surface of the conducting shim. The metallization layer extends through the dielectric layer and is electrically connected to the second surface of the semiconductor device by way of the conducting shim and the heatspreader.

Power overlay structure and method of making same

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Rexford, NY, United States of America

Arun Virupaksha Gowda