Applied Materials, Inc.

Arthur Y Chen

Gerald Z Yin

Xue-Yu Qian

Zhi-wen Sun

Shaoher X Pan

Jeffrey D Chinn

Xikun Wang

Ming-Hsun Yang

Weinan Jiang

Waiching Chow

Ming-Hsun Kuo

Yan Ye

Thorsten B Lill

Peter K Loewenhardt

Chun Yan

Diana Xiaobing Ma

Arthur H Sato

Michael N Grimbergen

David S Mui

Jonathan David Mohn

David S L Mui

Brian K Hatcher

Chii Guang Lee

John M Yamartino

Songlin Xu

Patrick Leahey

Wade Zawalski

Raney Williams

Hong Ching Shan

Xueyan Qian

Arnold Kolandenko

A process for etching multiple layers on a substratein an etching chamberand cleaning a multilayer etchant residue formed on the surfaces of the wallsand components of the etching chamber. In multiple etching steps, process gas comprising different compositions of etchant gas is used to etch layers on the substratethereby depositing a compositionally variant etchant residue inside the chamber. In one cleaning step, a first cleaning gas is added to the process gas to clean a first residue or to suppress deposition of the first residue onto the chamber surfaces. In a second cleaning step, another residue composition is cleaned off the chamber surfaces using a second cleaning gas composition.

Multiple stage process for cleaning process chambers

A process for etching a substrate in an etching chamber , and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls and components of the etching chamber . In the etching step, process gas comprising etchant gas is used to etch a substrate in the etching chamber thereby depositing etch residue inside the chamber . Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber , during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

Self-cleaning etch process

An apparatus and process for treating and conditioning an etching chamber , and cleaning a thin, non-homogeneous, etch residue on the walls and components of the etching chamber . In the etching step, a substrate is etched in the etching chamber to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber adjacent to the etching chamber , and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber to clean the etch residue on the walls and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

Treatment of etching chambers using activated cleaning gas

The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

Plasma assisted processing chamber with separate control of species density

A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

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Fremont, CA, United States of America

Arthur Y Chen