International Business Machines Corporation

Arthur W Martin

Kelly Malone

Habib Hichri

Timothy Joseph Dalton

Kevin Shawn Petrarca

John Anthony Fitzsimmons

Richard Paul Volant

Vincent James McGahay

Chandrasekhar Narayan

Ian D Melville

Lee Matthew Nicholson

Wei-Tsu Tseng

Brett H Engel

Jeffrey R Marino

Bernd E Kastenmeier

Edward Paul Barth

Brian Wayne Herbst

Sanjit Kumar Das

The coating thickness and uniformity of spin-on deposition layers on semiconductor wafers is controlled through the in situ control of the viscosity and homogeneity of the mixture of precursor material and solvent material. The thickness of the deposited material is selected and the viscosity required at a given spin rate for the selected thickness is automatically mixed. Sensing and control apparatus are employed to ensure that the uniformity and viscosity required is maintained before dispensing onto said semiconductor wafer. Low-K dielectric materials of selected thickness are deposited in a uniform coating.

Method and apparatus for controlling coating thickness

An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

Structure and method for reducing thermo-mechanical stress in stacked vias

A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.

Semiconductor wafer including a low dielectric constant thermosetting polymer film and method of making same

A new class of fluorinated arylacetylene compounds useful as monomers in the formation of polymers having low dielectric constant. These polymers, which are the reaction products of one of the fluorinated arylacetylene compounds, a diphenyl oxide biscyclopentadienone and, optionally, 1,3,5-tris(phenylacetylene)benzene, are useful in insulating microelectric device.

Low dielectric constant polymer and monomers used in their formation

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Arthur W Martin