Lam Research Corporation

Arthur M Howald

John C Valcore, Jr

Andras Kuthi

Andrew D Bailey, Iii

Andrew Fong

David Hopkins

Yezdi N Dordi

Fritz C Redeker

William Thie

John Boyd

Tiruchirapalli Arunagiri

John Patrick Holland

Yunsang Kim

Bradford J Lyndaker

Hyungsuk Alexander Yoon

Mikhail Korolik

Alan M Schoepp

Brian K McMillin

Frank Lin

Praveen Nalla

Shrikant Lohokare

Butch Berney

Zhonghui Alex Wang

Aleksander Owczarz

Carl Woods

David J Hemker

Mark Henry Wilcoxson

John P Parks

John M Boyd

Seyed Jafar Jafarian-Tehrani

Henry Povolny

Benjamin W Mooring

Anthony L Chen

Christopher H Olson

Johan Vertommen

Tiruchirapalli Arunagirí

Andrew D Iii Bailey

Andreas Kuthi

Systems and methods for tuning a megahertz radio frequency (RF) generator within a cycle of operation of a kilohertz (kHz) RF generator are described. In one of the methods, a predetermined periodic waveform is provided to a processor. The processor uses a computer-based model to determine plurality of frequency parameters for the predetermined periodic waveform. The frequency parameters are applied to the megahertz RF generator to generate an RF signal having the frequency parameters during one or more cycles of operation of the kilohertz RF generator.

Systems and methods for tuning a MHz RF generator within a cycle of operation of a kHz RF generator

Systems and methods for tuning a MHz RF generator within a cycle of operation of a kHZ RF generator

Systems and methods for reducing reflected towards a higher frequency radio frequency (RF) generator during a period of a lower frequency RF generator and for using a relationship to reduce reflected power are described. By tuning the higher frequency RF generator during the period of the lower frequency RF generator, precise control of the higher frequency RF generator is achieved for reducing power reflected towards the higher frequency RF generator. Moreover, by using the relationship to reduce the reflected power, time is saved during processing of a wafer.

Systems and methods for reducing power reflected towards a higher frequency RF generator during a period of a lower RF generator and for using a relationship to reduce reflected power

Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.

Systems and methods for tuning an impedance matching network in a step-wise fashion

An iterative etch process includes a plurality of cycles performed in a successive manner on a substrate. Each cycle of the plurality of cycles includes a deposition phase and an activation phase. The deposition phase is performed before the activation phase in each cycle. The deposition phase is defined as a plasma-based process to enable removal of a particular material from a surface of the substrate. The activation phase is defined as a plasma-based process to remove the particular material from the surface of the substrate. One or more feedback control signals are acquired during the iterative etch process, correlated to a condition of the substrate, and analyzed to determine the condition of the substrate. One or more process parameters of the iterative etch process is/are adjusted based on the condition of the substrate as determined by analyzing the one or more feedback control signals.

Feedback control system for iterative etch process

Systems and methods for segmenting an impedance matching model are described. One of the methods includes receiving the impedance matching model. The impedance matching model represents an impedance matching circuit, which is coupled to an RF generator via an RF cable and to a plasma chamber via an RF transmission line. The method further includes segmenting the impedance matching model into two or more modules of a first set. Each module includes a series circuit and a shunt circuit. The shunt circuit is coupled to the series circuit. The series circuit of the first module is coupled to a cable model and the series circuit of the second module is coupled to an RF transmission model. The series circuit and the shunt circuit of the first module are coupled to the series circuit of the second module. The shunt circuit of the second module is coupled to the RF transmission model.

Segmenting a model within a plasma system

Systems and methods for using computer-generated models to reduce reflected power towards a high frequency RF generator during a cycle of operations of a low frequency RF generator

Systems and methods for tuning an impedance matching network in a step-wise fashion for each state are described. By tuning the impedance matching network in a step-wise fashion for each state instead of directly achieving optimum values of a radio frequency (RF) for each state and directly achieving an optimal value of a combined variable capacitance for each state, processing of a wafer using the tuned optimal values becomes feasible.

Systems and methods for tuning an impedance matching network in a step-wise fashion for multiple states of an RF generator

Systems and methods for tuning an impedance matching network in a step-wise fashion for each state transition are described. By tuning the impedance matching network in a step-wise fashion for each state transition instead of directly achieving an optimal value of a combined variable capacitance for each state, processing of a wafer using the tuned optimal values becomes feasible.

Systems and methods for using computer-generated models to reduce reflected power towards an RF generator during state transitions of the RF generator by controlling RF values of the RF generator

Systems and methods for tuning a radio frequency (RF) generator are described. One of the methods includes supplying, by a high frequency RF generator, a high frequency RF signal to the IMN. The method includes accessing a plurality of measurement values of a variable measured at an output of the high frequency RF generator to generate a parameter. The variable is measured during a plurality of cycles of operation of a low frequency RF generator. The measurement values are associated with a plurality of values of power supplied by the high frequency RF generator. The method includes determining, for one of the cycles, a value of a frequency of the high frequency RF generator and a value of a factor associated with a shunt circuit of the IMN for which there is an increase in efficiency in power delivered by the high frequency RF generator.

Systems and methods for increasing efficiency of delivered power of a megahertz radio frequency generator in the presence of a kilohertz radio frequency generator

A method for modeling cable loss is described. The method includes receiving a measurement of reverse power and forward power at a radio frequency (RF) generator. The method further includes computing theoretical power delivered to a matching network as a difference between the forward power and the reverse power and calculating a ratio of the reverse power to the forward power to generate an RF power reflection ratio. The method further includes identifying a cable power attenuation fraction based on a frequency of the RF generator and calculating a cable power loss as a function of the RF power reflection ratio, the cable power attenuation fraction, and the theoretical power. The method includes calculating actual power to be delivered to the impedance matching network based on the theoretical power and the cable power loss and sending the calculated actual power to the RF generator to generate an RF signal.

Cable power loss determination for virtual metrology

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Pleasanton, CA, United States of America

Arthur M Howald