Lam Research Corporation

Petrophysical Services, Inc.

Arthur K Yasuda

Randall S Mundt

James E Tappan

Dean R Denison

Michael S Barnes

William S Kennedy

Peter S Aronstam

Surfaces having semiconductor oxides, metal oxides and hydrocarbons deposited thereon in a vacuum plasma processing chamber are in situ cleaned by introducing water vapor and SF.sub.6 and/or NF.sub.3 gas in the presence of a plasma discharge. The vapor and gas react to form gaseous HF, and an acidic gas including at least one of H.sub.2 SO.sub.4 and HNO.sub.3. The discharge ionizes and dissociates the HF and acidic gases to form gaseous reactants for the deposits. The reactants chemically react with the deposits, including the oxides and hydrocarbons, to vaporize these deposits. The vaporized deposits are pumped out of the chamber by the same pump which normally evacuates the chamber to a vacuum. Oxygen and/or H.sub.2 O.sub.2 vapors are introduced in the presence of the plasma to additionally clean the surfaces.

Method of in situ cleaning a vacuum plasma processing chamber

A method of controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surfaces which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature. Apparatus for controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. The apparatus includes a plasma shield having a line-of-sight surface and a plasma target having a target surface. The line-of-sight surface defines a bore through the plasma shield and is located out of direct contact with a plasma stream, such as oxygen, which passes from a plasma chamber, through the bore, and into a reaction chamber. A semiconductor specimen is mounted on a support in the reaction chamber. The target surface surrounds the specimen. The line-of-sight and target surfaces are maintained at a substantially constant temperature by circulating a fluid medium through fluid passages in the plasma shield and plasma target. The plasma target can include a removable plate having the target surface on one side thereof. The plasma shield can include a removable gas ring for ejecting gas, such as SiH.sub.4, into the bore.

Reaction chamber design to minimize particle generation in chemical

A method of controlling deposition quality of line-of-sight and specimen surrounding surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surface which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature.

Reaction chamber design and method to minimize particle generation in

A seismic receiver is provided for measuring seismic signals transmitted through the earth and received in a well borehole. A reversible electrical motor drives a harmonic drive reducer which amplifies the torque provided to drive a ball screw. The ball screw moves linearly along the axis of the well borehole to control the extension of a clamp arm into and out of an extended position in contact with subsurface earth adjacent the well borehole. A releasable electric clutch is provided so the receiver is retrievable in the event of a power failure while the clamp arm is extended.

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San Francisco, CA, United States of America

Arthur K Yasuda