Infineon Technologies Ag

Qimonda Ag

Armin Semmler

Henning Haffner

Christoph Nölscher

Torsten Franke

Christoph Friedrich

Martin Verbeek

Günther Czech

A final mask layout (') is produced by producing a provisional auxiliary mask layout in accordance with a predefined electrical circuit diagram and converting it into the final mask layout (&#x2032;) with the aid of an OPC method. Before carrying out the OPC method, with the provisional auxiliary mask layout (), firstly a modified auxiliary mask layout (&#x2032;) is formed by arranging at least one optically non-resolvable auxiliary structure () between two mask structures () of the provisional auxiliary mask layout (). The optically non-resolvable auxiliary structure () is positioned between the two mask structures () in a manner dependent on the structure size (B, B) of the two mask structures, (). An eccentric offset (V) of the optically non-resolvable auxiliary structure () between the two mask structures is effected in the case of differing structure sizes (&#x394;B) of the two mask structures.

Method for producing a mask layout avoiding imaging errors for a mask

A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

Photomask and method of structuring a photoresist by double exposure with imaging auxiliary structures and different exposure tools

An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.

Exposure mask with repaired dummy structure and method of repairing an exposure mask

A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.

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Munich, Germany

Armin Semmler