Applied Materials, Inc.

Kla-Tencor Technologies Corporation

Arik Donde

Edwin Charles Weldon

Dan Maydan

Shamouil Shamouilian

Brian C Lue

Robert J Steger

Timothy S Dyer

Kenneth S Collins

Ananda H Kumar

Arnold Kholodenko

Kadthala Ramaya Narendrnath

Dennis Stanley Grimard

Alexander M Veytser

Semyon L Kats

Andreas G Hegedus

Hyman J Levinstein

Robert W Wu

Surinder S Bedi

Jon T Clinton

Yehiel Gotkis

Herzel Laor

Vincenzo Lordi

A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Temperature stabilization for substrate processing

An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Electrostatic chuck having composite dielectric layer and method of manufacture

An electrostatic chuck useful for holding a substrate in a high density plasma, comprises an electrode at least partially covered by a semiconducting dielectric , wherein the semiconducting dielectric may have an electrical resistance of from about 5&times;10 &OHgr;cm to about 8&times;10 &OHgr;cm.

Dielectric covered electrostatic chuck

A structure and method are present where a sidewall of a load lock chamber is formed by extrusion, to produce a reproducible tubular structure to form the walls of a vacuum chamber with greatly improved vacuum performance. The use of an extruded structure reduces the dimensional variability, increases the uniformity of a surface finish, and provides uniform top and bottom sealing arrangements, which allow full and easy access to the inside of the sidewalls for cleaning. In another arrangement heat transfer fluid passages can be formed in the wall of the chamber simultaneously as the wall of the chamber is extruded. Heating or cooling liquid can then be circulated through the passages in the wall of the chamber to heat the walls of the chamber as sometimes required to prevent condensation on the inside of the chamber walls, or provide cooling as is required for cool down of a wafer, after processing at an elevated temperature.

Method for producing vacuum processing chambers

A structure and method are present where a sidewall of a load lock chamber is formed by extrusion, to produce a reproducible tubular structure to form the walls of a vacuum chamber with greatly improved vacuum performance. The use of an extruded structure reduces the dimensional variability, increases the uniformity of a surface finish, and provides uniform top and bottom sealing arrangements, which allow full and easy access to the inside of the sidewalls for cleaning. In another arrangement heat transfer fluid passages can be formed in the wall of the chamber simultaneously as the wall of the chamber is extruded. Heating of cooling liquid can then be circulated through the passages in the wall of the chamber to heat the walls of the chamber as sometimes required to prevent condensation on the inside of the chamber walls, or provide cooling as is required for cool down of a wafer, after processing at an elevated temperature.

Vacuum processing chambers and method for producing

An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

Electrostatic chuck having improved gas conduits

A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

Puncture resistant electrostatic chuck

The present invention discloses a surface structure and a method for preparation of the structure. The surface structure comprises a dielectric material in intimate contact with an underlying material having undercut formations therein which enhance the adhesion of the dielectric material to the surface of the underlying material. Preferred applications for the surface structure include semiconductor processing apparatus such as process chamber interior surfaces and the surfaces of functional elements used within the chamber. Functional elements include an electronic chuck used to hold a semiconductor substrate in place within the process chamber. The surface structure comprises at least one, and preferably a plurality of undercut formations which facilitate mechanical locking of a dielectric layer applied thereover. Preferably the undercut formation is at least one groove which traverses the surface to which the dielectric material is to be applied. The precise shape of the undercut formation (groove) depends upon the dielectric material which is to be applied to the surface structure, since the dielectric material must be capable of making intimate contact with the surface of the structure. Particularly for high temperature applications, ceramic materials are the dielectric material of choice. The most commonly used material for the interior of semiconductor processing chambers and functional elements used therein is aluminum or an aluminum-comprising alloy.

Surface preparation to enhance adhesion of a dielectric layer

The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

Conduits for flow of heat transfer fluid to the surface of an

A piezoelectric gripping system firmly secures a semiconductor wafer or other workpiece onto a robotic transfer blade so as to allow for acceleration forces that exceed the frictional holding force between the blade and workpiece. To prevent production of contaminating particulates during grasping, the piezoelectric grippers of the system are independently actuated into slight contact with the workpiece so as to prevent frictional movement of the workpiece relative to the blade during the grasping operation. Once all of the grippers are in slight contact with the workpiece, the voltage to each gripper is increased by a predetermined amount to thereby uniformly increase the force exerted by each gripper on the workpiece and to thereby more firmly secure the workpiece to the blade. Thereafter, the blade may transfer the workpiece at extremely high speeds without the workpiece moving frictionally relative to the blade.

Growing community of inventors

Cupertino, CA, United States of America

Arik Donde