At&s Austria Technologie & Systemtechnik Aktiengesellschaft

Ares Wang

Annie Tay

Yee-Bing Ling

A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.

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Shanghai, China

Ares Wang