Intel Corporation

Aranzazu Maestre Caro

Feras Eid

Sasha N Oster

Fay Hua

Veronica Aleman Strong

Ramanan Chebiam

A method including activating an area of a polymer layer on a substrate with electromagnetic radiation; modifying the activated area; forming a self-assembled monolayer on the modified active area; reacting the self-assembled monolayer with the self-assembled monolayer; and reacting the self-assembled monolayer with a conductive material. A method including activating an area of a polymer dielectric layer on a substrate with electromagnetic radiation, the area selected for an electrically conductive line; modifying the activated area; forming a self-assembled monolayer on the modified active area; reacting the self-assembled monolayer with a catalyst; and electroless plating a conductive material on the self-assembled monolayer.

Sam assisted selective e-less plating on packaging materials

Embodiments of the disclosure are directed to using a SAM liner to promote electroless deposition of metal for integrated circuit interconnects. The SAM liner can be formed on a dielectric substrate. A protective layer can be formed on the SAM liner. The protective layer can double as a seed layer for electroless deposition of an interconnect metal. The interconnect metal can be deposited on the protective layer using electroless deposition. The dielectric, with the SAM liner, the protective layer, and the interconnect metal can be annealed to reflow the interconnect metal into trenches formed in the dielectric.

Forming interconnects with self-assembled monolayers

An apparatus system is provided which comprises: a fabric; a self-assembled monolayer (SAM) material formed on the fabric; and a battery cell formed on the fabric, wherein a current collector of the battery cell is at least in part formed on the SAM material.

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Hillsboro, OR, United States of America

Aranzazu Maestre Caro