Tel Fsi, Inc.

Anthony S Ratkovich

Jeffery W Butterbaugh

David Scott Becker

A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGe(x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGe. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.

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A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150&#xb0; C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

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Bloomington, MN, United States of America

Anthony S Ratkovich