Tokyo Electron Limited

Anthony R Schepis

Anton J deVillers

H Jim Fulford

Mark I Gardner

Daniel J Fulford

David C Conklin

Andrew Weloth

Anton J Devilliers

Jodi Grzeskowiak

Hoyoung Kang

Michael Murphy

Charlotte Cutler

Techniques herein include methods for coating a single layer actuator film or multi-layer actuator film on the backside of a wafer. The actuator film includes one or more chemical actuators. Chemical actuators are various molecules, crystals, chemical compounds and other chemical compositions that are capable of imposing directional stress in response to application of an external stimulus on the chemical actuator. The external stimulus can include a particular wavelength of light or polarization of light, or heat (or directed infrared radiation) or load, which can include load-responsive actuation or pressure-responsive actuation.

Method of adjusting wafer shape using multi-directional actuation films

Aspects of the present disclosure provide a bonding device for bonding two wafers. For example, the bonding device can include a first bonding chuck and a second bonding chuck. The first bonding chuck can have a first bonding head for a first wafer to be mounted thereon. The second bonding chuck can have a plurality of second bonding heads for a second wafer to be mounted thereon. The second bonding heads can be controlled individually to apply local pressures onto the second wafer to move the second wafer toward the first wafer to bond the second wafer to the first wafer, the local pressures corresponding to bow measurement of the first wafer and the second wafer.

3D multiple location compressing bonded arm for advanced integration

A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.

Hybrid patterning-bonding semiconductor tool

A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

Wafer shape control for W2W bonding

A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.

Method of patterning a substrate using a sidewall spacer etch mask

Aspects of the present disclosure provide a method for improving overlay alignment of patterning by correcting wafer shape. For example, the method can include receiving a wafer having a working surface with at least partially-fabricated semiconductor devices, and a backside surface opposite to the working surface. The method can also include forming a first stressor film on the backside surface. The first stressor film can modify overlay alignment of the working surface in a first direction across the working surface of the wafer. The method can also include forming one or more first semiconductor structures on the working surface of the wafer. The first semiconductor structures are aligned in the first direction.

Precision multi-axis photolithography alignment correction using stressor film

A method for marking a semiconductor substrate at the die level for providing unique authentication and serialization includes projecting a first pattern of actinic radiation onto a layer of photoresist on the substrate using mask-based photolithography, the first pattern defining semiconductor device structures and projecting a second pattern of actinic radiation onto the layer of photoresist using direct-write projection, the second pattern defining a unique wiring structure having a unique electrical signature.

Method for die-level unique authentication and serialization of semiconductor devices using electrical and optical marking

A method of processing a substrate includes forming a channel through a substrate, depositing a layer of polycrystalline silicon on sidewalls of the channel, and oxidizing uncovered surfaces of the polycrystalline silicon with an oxidation agent. The oxidizing agent causes formation of an oxidized layer, the oxidized layer having a uniform thickness on uncovered surfaces of the polycrystalline silicon. The method includes removing the oxidized layer from the channel with a removal agent, and repeating steps of oxidizing uncovered surfaces and removing the oxidized layer until removing a predetermined amount of the layer of polycrystalline silicon.

Cyclic self-limiting etch process

A method for planarizing a substrate includes: receiving a substrate having microfabricated structures that differ in height across the working surface of the substrate that define a non-planar topography, depositing a first layer that includes a solubility-shifting agent on the working surface of the substrate by spin-on deposition in a non-planar fashion, exposing the first layer to a first pattern of actinic radiation based on the topography, developing the first layer using a predetermined solvent, and depositing a second layer over the working surface of the substrate that has a greater planarity as compared to the first layer prior to developing the first layer. The first pattern of radiation changes a solubility of the first layer such that upper regions of the non-planar topography of the first layer are soluble to the predetermined solvent.

Planarization of spin-on films

Aspects of the present disclosure provide a method for forming a chiplet onto a semiconductor structure. For example, the method can include providing a first semiconductor structure having a first circuit and a first wiring structure formed on a first side thereof. The method can further include attaching the first side of the first semiconductor structure to a carrier substrate. The method can further include forming a stress film on a second side of the first semiconductor structure. The method can further include separating the carrier substrate from the first semiconductor structure. The method can further include cutting the stress film and the first semiconductor structure to define at least one chiplet. The method can further include bonding the at least one chiplet to a second semiconductor structure having a second circuit and a second wiring structure such that the second wiring structure is connected to the first wiring structure.

Localized stress regions for three-dimension chiplet formation

Aspects of the present disclosure provide a method for forming a chiplet onto a semiconductor structure. The method can include providing a first semiconductor structure having a first circuit and a first wiring structure formed on a first side thereof, and attaching the first side to a carrier substrate. The method can further include forming a composite of a first stress film and a second stress film on a second side of the first semiconductor structure, and separating the carrier substrate from the first semiconductor structure. The method can further include cutting the composite of the first stress film and the second stress film and the first semiconductor structure to define at least one chiplet, and bonding the at least one chiplet to a second semiconductor structure that has a second circuit and a second wiring structure such that the second wiring structure is connected to the first wiring structure.

Aspects of the present disclosure provide an imaging system. For example, in the imaging system a first light source can generate a first light beam of a first wavelength, a second light source can generate a second light beam of a second wavelength, the second light beam having power sufficient to pass through at least a portion of a thickness of a wafer, an alignment module can coaxially align the second light beam with the first light beam, a coaxial module can focus the coaxially aligned first and second light beams onto a first pattern located on a front side of the wafer and a second pattern located below the first pattern, respectively, and an image capturing module can capture a first image of the first pattern and a second image of the second pattern. The second image can be captured via quantum tunneling imaging or infrared (IR) transmission imaging.

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Averill Park, NY, United States of America

Anthony R Schepis