Electron Vision Corporation

Anthony L Rubiales

William R Livesay

Matthew F Ross

Selmer Wong

Heike Thompson

Trey Marlowe

Mark Narcy

An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

Method for curing spin-on dielectric films utilizing electron beam radiation

An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.

Method for curing spin-on-glass film utilizing electron beam radiation

Growing community of inventors

Poway, CA, United States of America

Anthony L Rubiales