Lam Research Corporation

Anthony De La Llera

Rajinder Dhindsa

Michael C Kellogg

Xuyen Pham

Saurabh J Ullal

Pratik Mankidy

Anthony J Norell

Alexei Marakhtanov

Keith Laurence Comendant

Yen-Kun Victor Wang

Jason Augustino

Babak Kadkhodayan

Allan Kent Ronne

Jaehyun Kim

William M Denty, Jr

Gregory R Bettencourt

Tony Luong

Andrew D Bailey, Iii

Eric A Hudson

Lumin Li

Gerardo Delgadino

Sang Ki Nam

Cangshan Xu

David Wei

Ryan Bise

Mike Kellogg

Jim Rogers

Tuan Anh Nguyen

John Patrick Holland

Harmeet Singh

Roger Patrick

Travis R Taylor

Bing Ji

Darrell Ehrlich

David Z Carman

Gautam Bhattacharyya

Sandy Chao

Thomas R Stevenson

Rajesh Dorai

Simon Gosselin Eng

Andrew Siu

Alecia Chantalle Griffin

Peter Bradley Phillips

Rajlnder Dhindsa

A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate using plasma and at least one magnetic field source configured to generate one or more active magnetic fields through the processing zone. The apparatus also includes a magnetic field sensor configured to detect a signal representing the one or more active magnetic fields, and a controller coupled to the magnetic field sensor, and the at least one magnetic field source. The controller is configured to detect a target value corresponding to at least one characteristic of the one or more active magnetic fields, set an initial current through the at least one magnetic field source, the initial current corresponding to the target value; and adjust a subsequent current through the at least one magnetic field source based on the detected signal representing the one or more active magnetic fields.

Magnetic field control system

Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.

Showerhead faceplates with angled gas distribution passages for semiconductor processing tools

A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

Multi zone gas injection upper electrode system

A thermally and electrically conductive gasket of a gasket set configured to be mounted between a faceplate and backing plate of a showerhead electrode assembly includes an inner gasket configured to be mounted on an inner electrode of a showerhead electrode assembly. The inner gasket includes a plurality of concentric flat rings connected by a plurality of spokes. A first annular gasket surrounds and is concentric with the inner gasket and includes a flat annular ring having a plurality of cutouts. A second annular gasket surrounds and is concentric with the first annular gasket and includes a flat annular ring having a plurality of cutouts. A third annular gasket surrounds and is concentric with the second annular gasket and includes a flat annular ring having a plurality of cutouts. The gasket accommodates gas injection holes, alignment pin holes, an alignment ring groove, and/or threaded holes.

Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly

A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

Dual zone temperature control of upper electrodes

An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of &#xbc; to &#xbd; the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.

A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end.

Gas feed insert in a plasma processing chamber and methods therefor

A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.

Showerhead electrode assembly with gas flow modification for extended electrode life

A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.

Plasma confinement ring assembly for plasma processing chambers

A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

Movable grounding arrangements in a plasma processing chamber and methods therefor

Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.

Upper electrode backing member with particle reducing features

A cam lock clamp comprises a stud having a substantially cylindrical body with a first end including a head area and a second end arranged to support one or more disc springs concentrically about the stud. A socket is arranged to mechanically couple concentrically around the stud with the head area of the stud being exposed above an uppermost portion of the socket. The socket is configured to be firmly attached to a consumable material. A camshaft has a substantially cylindrical body and is configured to mount within a bore of a backing plate. The camshaft further comprises an eccentric cutout area located in a central portion of the camshaft body. The camshaft is configured to engage and lock the head area of the stud when the consumable material and the backing plate are proximate to one another.

Cam lock electrode clamp

A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

Showerhead electrode

A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

Cam-locked showerhead electrode and assembly

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Fremont, CA, United States of America

Anthony De La Llera