Energy Conversion Devices, Inc.

Ford Motor Company Limited

Annette J Krisko

Stanford R Ovshinsky

Stephen J Hudgens

Joachim Doehler

James W Proscia

Lester R Peedin

Jeffrey M Krisko

Krishna Sapru

Benjamin S Chao

Buddie R Dotter, Ii

David Beglau

Buddie Dotter Ii

A microwave plasma enhanced PVD/CVD apparatus and method. The apparatus includes an evacuable deposition chamber having a plasma region and a deposition region adjacent one another. The apparatus also includes a source of microwave energy, and a microwave waveguide to transfer microwave energy from the source thereof to the plasma region. Additionally, the apparatus includes a plate, crucible or boat for holding solid or liquid starting materials within said plasma region, and a system of flow controllers and gas transport tubing for introducing gaseous materials into the plasma region, the interaction of the microwave energy with the gaseous materials forms a plasma within the plasma region. The plasma provides thermal energy for the evaporation of the solid or liquid starting materials and causes the reaction of any reactive gases or vapors present in the plasma region. A substrate holder is positioned within the deposition region for holding a substrate upon which the deposited material is collected and a system of pumps, valves and exhaust tubing is attached to the deposition chamber for evacuating the deposition chamber and venting undeposited waste gases and vapors. The method involves the steps of providing an evacuable deposition chamber having a plasma region and a deposition region adjacent one another; positioning a substrate within the deposition region; providing solid or liquid starting materials within the plasma region; evacuating the deposition chamber; providing a source of microwave energy; transferring microwave energy from the source thereof to the plasma region; introducing gaseous materials into the plasma region; interacting the microwave energy with the gaseous materials to form a plasma within the plasma region, the plasma providing thermal energy for the evaporation of the solid or liquid starting materials and causing the reaction of any reactive gases or vapors present in the plasma region; depositing the evaporated and reacted species upon the substrate to form a thin film of deposited material; and venting undeposited waste gases and vapors from the deposition chamber.

Apparatus for microwave plasma enhanced physical/chemical vapor

A plasma enhanced chemical vapor deposition method is provided for depositing an oxide film onto a substrate surface. Deposition is achieved even onto a surface of a glass or other relatively non-receptive substrate. A sub-film is deposited under plasma enhanced chemical vapor deposition conditions more strongly favoring deposition, followed by deposition of the desired oxide film under second plasma enhanced chemical vapor deposition conditions less strongly favoring deposition. High quality oxide films can be achieved by deposition at second plasma enhanced chemical vapor deposition conditions only marginally favoring deposition over etching.

Plasma enhanced chemical vapor deposition of oxide film stack

A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Method of creating a high flux of activated species for reaction with a

A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Method for the high rate plasma deposition of high quality material

Growing community of inventors

Highland, MI, United States of America

Annette J Krisko