Intel Corporation

Anne Meixner

Nasser A Kurd

David J O'Brien

Kersi H Vakil

Eric R Wehage

Jashojiban Banik

R Tim Frodsham

Mike J Tripp

Glenn F King

Sarah E Bates

Jeff Wight

Rajay R Pai

Doug Guddat

A method includes providing a device under test (DUT) which has an input port and an output port. The DUT also has a squelch detector which is coupled to receive a signal from the input port. The DUT also has a receiver amplifier coupled to receive a signal from the input port. In addition, the DUT also has a transmitter to transmit data signals from the output port. The method further includes providing a loopback connection from the output port to the differential input port. The method also includes controlling the transmitter to transmit a test signal from the output port to the input port. The method includes monitoring at least one of respective outputs of the receiver amplifier and the squelch detector to determine whether a leakage condition exists in the DUT. Other embodiments are described and claimed.

Leakage testing for differential signal transceiver

In one embodiment, an integrated circuit including a plurality of input/output (I/O) buffers is disclosed. The integrated circuit contains a plurality of I/O buffers. Each of the I/O buffers include an I/O test circuit that generates test pattern signals whenever the integrated circuit is operating in a loopback test mode. According to a further embodiment, the integrated circuit includes one or more programmable delay circuits coupled to the I/O buffers that permit switching state (AC) loopback timing tests to be conducted.

Method and apparatus for conducting input/output loop back tests using a local pattern generator and delay elements

A test circuit and method for testing a memory cell in a static random access memory. The memory cell is coupled to a bit line and a complementary bit line. The test circuit includes a charging device coupled to selectively charge one of the bit line or the complementary bit line and a discharging device coupled to selectively discharge the other of the bit line and the complementary bit line. To test a memory cell containing the first value, the test circuit performs a weak write of the second value to the memory cell. The weak write overwrites the first value contained in the memory cell with the second value if the memory cell is defective. The memory cell retains the first value if functioning properly.

Static random access memory SRAM having weak write test circuit

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Portland, OR, United States of America

Anne Meixner