Fei Comapny

Anna Prokhodtseva

Tomás Vystavel

Bohuslav Sed'a

Jaroslav Stárek

Libor Strakos

Jaromir Vanhara

The invention relates to a method 3D defect characterization of crystalline samples in a scanning type electron microscope. The method comprises Irradiating a sample provided on a stage, selecting one set of crystal lattice planes of the sample and orienting said set to a first Bragg condition with respect to a primary electron beam impinging on said sample, and obtaining Electron Channeling Contrast Image for an area of interest on the sample. The method is characterized by performing, at least once, the steps of orienting said selected set of crystal lattice planes to a further Bragg condition by at least tilting the sample stage with the sample by a user-selected angle about a first tilt axis, and obtaining by Electron Channeling Contrast Image for a further area of interest.

3D defect characterization of crystalline samples in a scanning type electron microscope

A substrate is alignable for ion beam milling or other inspection or processing by obtaining an electron channeling pattern (ECP) or other electron beam backscatter pattern from the substrate based on electron beam backscatter from the substrate. The ECP is a function of substrate crystal orientation and tilt angles associated with ECP pattern values at or near a maximum, minimum, or midpoint are used to determine substrate tilt. Such tilt is then compensated or eliminated using a tilt stage coupled the substrate, or by adjusting an ion beam axis. In typical examples, circuit substrate 'chunks' are aligned for ion beam milling to reveal circuit features for evaluation of circuit processing.

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Eindhoven, Netherlands

Anna Prokhodtseva