Infineon Technologies Ag

Anja Gissibl

Hermann Wendt

Thomas Fischer

Dietrich Bonart

Bernhard Weidgans

Gudrun Stranzl

Johann Strasser

Tobias Schmidt

Stefan Willkofer

Thomas Kunstmann

Eva-Maria Hess

Matthias Mueller

A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

Method for processing a semiconductor workpiece with metallization

Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Porous metal etching

Growing community of inventors

Wuppertal, Germany

Anja Gissibl