Novellus Systems Incorporated

Anirban Guha

David Wingto Cheung

Kirk J Ostrowski

Huatan Qiu

Woody Chung

James A Fair

Haoquan Fang

Ilia Kalinovski

Jack Kuo

John Keller

Ted Li

Vincent Bernard Decaux

Zhao Li

Guhua Yao

Peter Jagusch

Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Ultra low silicon loss high dose implant strip

Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.

Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes

Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

Plasma generator apparatus

Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160&#xb0; C. or less, e.g., less than about 90&#xb0; C.

Low damage photoresist strip method for low-K dielectrics

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Milpitas, CA, United States of America

Anirban Guha