Lam Research Corporation

Planar Labs Corporation

Ontrak Systems, Inc.

Anil K Pant

Wilbur C Krusell

Douglas W Young

Andrew J Nagengast

Rahul Jairath

Sanjay Dabral

Erik H Engdahl

Joseph R Breivogel

Konstantin Volodarsky

Saket Chadda

Edward T Ferri, Jr

Randall L Green

Robert G Boehm, Jr

Kamal Mishra

Leon Volfovski

Glenn W Travis

Brian Scott Thornton

David E Weldon

Michael Labunsky

Anthony S Meyer

Robert M Rivera

Konstantin Volodarski

Embodiments of the invention include an ion exchange polish pad for polishing a semiconductor substrate, on which various conductive, semiconductive, and/or insulative layers are formed, for example a conductive copper layer. Embodiments also include the method for the manufacture of an ion exchange polish pad. In certain embodiments an ion exchange polish pad includes a base material and a ion exchange layer including, which further includes an ion exchange material. Cations in the ion exchange material may be exchanged with other cations, such as copper, under the proper process conditions for the planarization of a processed semiconductor substrate.

Fabrication of an ion exchange polish pad

In certain embodiments of the invention an ion exchange polish pad, which is used for polishing Copper layers formed on a semiconductor substrate, may be conditioned and/or reconditioned to regenerate its binding capacity for cations. Once bound to an ion exchange polish pad, cations for example may be exchanged for protons (H ) by exposing the ion exchange polish pad to a reconditioning medium(s). The exchange of cations with H reconditions the ion exchange material of an ion exchange polish pad so it is capable of binding and removing additional cations from a surface. In certain embodiments, a reconditioning head is used to recondition an ion exchange polish pad. A typical reconditioning process comprises elution of bound copper from ion exchange polish pad followed by protonation. Elution of bound copper may be accomplished by exposing an ion exchange polish pad to a strong acid solution, or similar chemical treatments.

Method and apparatus to recondition an ion exchange polish pad

Embodiments of the invention include methods and apparatus for electrodialytic polishing of various layers formed on semiconductor substrates. In certain embodiments the use of electrodialytic processes in conjunction with chemical mechanical forces to achieve a copper interconnect with a desired level of planarity and process performance. In certain embodiments electrodialytic polishing uses an electrodialytic polish pad, which is an active pad which has copper binding groups provided in its core structure and has an added capability of allowing electrical conductivity. An electrodialytic polish pad allows transfer of cations or anions through a membrane in the presence of an electric field and into a cathodic electrolyte. Under the influence of an electric field the electrodialytic polish pad and/or electrodialytic pads are continuously refreshed to bind cations.

Method and apparatus for electrodialytic chemical mechanical polishing and deposition

An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Integrated pad and belt for chemical mechanical polishing

A polishing head for performing chemical-mechanical polishing on a linear polisher has a flexible diaphragm coupling between a wafer carrier and a support housing which houses the wafer carrier. The diaphragm allows the carrier to move-substantially in the vertical direction within the housing, but a center shaft assembly limits movement in the horizontal direction.

Polishing head for chemical mechanical polishing using linear planarization technology

A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Method and apparatus for polishing semiconductor wafers

A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next. In order to ensure that there is a noticeable difference in the shear force variation at the polishing end point, a slurry having a particular pH level is selected. The pH level ensures that the zeta potential changes noticeably from one material to the next, so as to induce a change in the shear force, which is detected by a change in the fluid pressure.

Use of zeta potential during chemical mechanical polishing for end point detection

A temperature compensating unit is coupled to a linearly moving belt of a polisher for adjusting the temperature of the belt, which temperature is measured by a sensor situated proximal to the belt.

Method and apparatus for stabilizing the process temperature during chemical mechanical polishing

A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next.

Apparatus and method for performing end point detection on a linear planarization tool

A technique for integrating a film thickness monitoring sensor within a load and unload unit of a cluster tool for performing chemical-mechanical polishing (CMP). In order to determine CMP performance, a sensor (or sensors) for determining film thickness is/are integrated within the load and unload unit of the cluster tool. Accordingly, film thickness measurements can then be taken at discrete times during the processing cycle without removing the wafer from the cluster tool.

Apparatus and method for film thickness measurement integrated into a

A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.

Control of chemical-mechanical polishing rate across a substrate surface

The present invention describes an apparatus and method for aligning a pad/belt on a roller for use in chemical mechanical polishing using linear planarization. The present invention comprises an alignment sensor that senses the alignment of the pad/belt. The present invention additionally comprises a tensioner that tensions the pad/belt on the roller. And, a controller that controls the alignment of the pad/belt on the roller by controlling the tensioner.

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Santa Clara, CA, United States of America

Anil K Pant