Motorola Corporation

Angela Rogona

William H Lytle

Ravinder K Sharma

Bennett L Hileman

A backside metalization scheme for semiconductor devices includes a vanadium layer disposed on the backside of a wafer and a silver layer disposed on the vanadium layer. An optional intermediate layer comprising either a mixture of vanadium and silver or nickel may be disposed between the vanadium layer and the silver layer. The vanadium layer exhibits excellent adhesion characteristics on the backside of wafers having a finish at least as fine as a 300 grit equivalency while the silver layer exhibits excellent solderability characteristics.

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Phoenix, AZ, United States of America

Angela Rogona