Spin Memory, Inc.

Integrated Silicon Solution, (cayman) Inc.

Andy Walker

Kuk-Hwan Kim

Dafna Beery

Marcin Gajek

Michail Tzoufras

Satoru Araki

Kadriye Deniz Bozdag

Eric Ryan

Amitay Levi

Amity Levi

Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.

Patterned silicide structures and methods of manufacture

A Magnetic Tunnel Junction (MTJ) device can include an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selectors coupled to respective source lines, MJT structures coupled to respective selectors and a plurality of bit lines disposed in rows and coupled to respective sets of MTJ structures. The array of cells can also include buffers coupled between respective selectors and respective MTJ structures. In addition, multiple arrays can be stacked on top of each other to implement vertical three-dimensional (3D) MTJ devices.

Devices including magnetic tunnel junctions integrated with selectors

Methods of fabricating devices including arrays of integrated Magnetic Tunnel Junctions (MTJs) and corresponding selectors in an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selectors coupled to respective source lines, MJT structures coupled to respective selectors and a plurality of bit lines disposed in rows and coupled to respective sets of MTJ structures. The array of cells can also include buffers coupled between respective selectors and respective MTJ structures. In addition, multiple arrays can be fabricated on top of each other to implement vertical three-dimensional (3D) MTJ devices.

Methods of fabricating magnetic tunnel junctions integrated with selectors

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Fremont, CA, United States of America

Andy Walker