Nanometrics Inc.

Sumco Corporation

Sumco Phoenix Corporation

Andrzej Buczkowski

Benno Orschel

Keiichi Takanashi

Joel Kearns

Volker Todt

Fritz Kirscht

Amit Shachaf

Christopher J Raymond

Steven G Hummel

Tom Walker

Nicolas Laurent

Mikhail Sluch

An optical metrology device is capable of detection of any combination of photoluminescence light, specular reflection of broadband light, and scattered light from a line across the width of a sample. The metrology device includes a first light source that produces a first illumination line on the sample. A scanning system may be used to scan an illumination spot across the sample to form the illumination line. A detector collects the photoluminescence light emitted along the illumination line. Additionally, a broadband illumination source may be used to produce a second illumination line on the sample, where the detector collects the broadband illumination reflected along the second illumination line. A signal collecting optic may collect the photoluminescence light and broadband light and focus it into a line, which is received by an optical conduit. The output end of the optical conduit has a shape that matches the entrance of the detector.

Optical metrology system for spectral imaging of a sample

An optical metrology device is capable of detection of any combination of photoluminescence light, specular reflection of broadband light, and scattered light from a line across the width of a sample. The metrology device includes a first light source that produces a first illumination line on the sample. A scanning system may be used to scan an illumination spot across the sample to form the illumination line. A detector spectrally images the photoluminescence light emitted along the illumination line. Additionally, a broadband illumination source may be used to produce a second illumination line on the sample, where the detector spectrally images specular reflection of the broadband illumination along the second illumination line. The detector may also image scattered light from the first illumination line. The illumination lines may be scanned across the sample so that all positions on the sample may be measured.

A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Procedure for in-situ determination of thermal gradients at the crystal growth front

A method and apparatus identifies defects in a sample using photoluminescence with a silicon filter to filter out the primary excitation light from the return light received by the detector. The silicon filter passes the light emitted by the sample in response to the excitation light, while absorbing the lower wavelength excitation light that is reflected by or transmitted through the sample. The silicon filter has introduced impurities that reduce the recombination lifetime which reduces or eliminate photoluminescence in the silicon filter in response to the excitation light, thereby improving the signal to noise ratio of the signal received by the detector.

Silicon filter for photoluminescence metrology

A method of determining a diffusion length of a minority carrier in a material which includes applying a first excitation light having a first photon flux to a material, measuring a first surface photo voltage resulting from the application of the first excitation light, applying a second excitation light having a second photon flux to the material, measuring a second surface photo voltage resulting from the application of the second excitation light, applying a third excitation light having a third photon flux, having a predetermined ratio to the first photon flux, to the material, measuring a third surface photo voltage resulting from the application of the third excitation light, determining a diffusion length of a minority carrier in the material based on the measured first, second and third surface photo voltages.

Method for determining a minority carrier diffusion length using surface photo voltage measurements

A method for using photoluminescence to identify defects in a sub-surface region of a sample includes performing a first probe of the sample. A first data set, based on the first probe, is produced indicating defects located primarily in a surface layer of the sample. A second data set, based on a second probe, is produced indicating defects located in both the surface layer and a sub-surface region of the sample. The first data set is subtracted from the second data set to produce a third data set indicating defects located primarily in the sub-surface region of the sample. The first data set may optionally be normalized relative to the second data set before performing the subtraction. The first and second probes may advantageously be performed using a first laser and a second laser, respectively, having different wavelengths from each other.

Differential wavelength photoluminescence for non-contact measuring of contaminants and defects located below the surface of a wafer or other workpiece

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Bend, OR, United States of America

Andrzej Buczkowski