Applied Materials, Inc.

Andrew Siordia

Kun Xu

Rajeev Bajaj

Jeonghoon Oh

Shou-Sung Chang

Jianshe Tang

Haosheng Wu

Hari N Soundararajan

A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

Compensation for slurry composition in in-situ electromagnetic inductive monitoring

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

Temperature control of chemical mechanical polishing

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Sunnyvale, CA, United States of America

Andrew Siordia