Applied Materials, Inc.

Andrew S Devaney

Bernard F Harrison

Peter T Kindersley

Paul A Burfield

John Pontefract

David R Burgin

Peter Meares

Nicholas Bright

Jonathon Simmons

Richard David Goldberg

David George Armour

Christopher Burgess

David Kirkwood

John R Shelley

The present invention relates to ion sources () comprising a cathode () and a counter-cathode () that are suitable for ion implanters (). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (). The ion source according to the present invention further comprises a cathode () arranged to emit electrons into the arc chamber; an electrode () positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources () arranged to bias the electrode; and a voltage potential adjuster () operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Cathode and counter-cathode arrangement in an ion source

A kinematic electrode mount is provided for an ion implanter in which an electrode insert member having an electrode body portion which defines an aperture, is inserted into an electrode support frame. In one embodiment, a first kinematic alignment pin of the insert member engages a first, groove-shaped kinematic alignment surface of the electrode support frame to align the first alignment pin in two orthogonal directions relative to the electrode support frame. In addition, a second kinematic alignment pin of the insert member engages a second kinematic alignment surface of the electrode support frame to align the insert member in a rotational orientation relative to the electrode support frame. A plurality of flanges of the insert member engage the electrode support frame to retain the insert member in the aligned position and to electrically couple the electrode insert member to the electrode support frame. A spring positioned between the electrode insert member and the electrode support frame biases the electrode insert member in the aligned and retained position relative to the electrode support frame. In another embodiment, the electrode support frame has alignment pins and the insert member has alignment slots.

Kinematic ion implanter electrode mounting

An electrically insulating vacuum coupling for use in an ion implanter for connecting any two parts of the vacuum chamber housing together while maintaining the electrical potentials of the two parts. The coupling comprises an inner sleeve of ceramic material (e.g. Al O ) and an outer sleeve of a polymer/litharge mixture. The polymer may be a urethane polymer. Litharge is included in the material of the outer sleeve to absorb x-rays produced within the vacuum chamber. The coupling is particularly useful for coupling an ion source to the main housing of the vacuum chamber

Electrically insulating vacuum coupling

Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

Ion implantation apparatus having increased source lifetime

Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a shield, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by using a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

Ion implantation having increased source lifetime

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Wivelsfield Green, United Kingdom

Andrew S Devaney