Intel Corporation

Other

Andrew Paul Collins

Jianyong Xie

Sujit Sharan

Ram S Viswanath

Rajasekaran Swaminathan

Bharat P Penmecha

Isaac Ali

Colin Leslie Perry

William L Barber

Keith Pinson

Boping Wu

Debendra Mallik

Mathew J Manusharow

Aleksandar Aleksov

Henning Braunisch

Kemal Aygun

Omkar G Karhade

Ravindranath Vithal Mahajan

Zhiguo Qian

Saikumar Jayaraman

Shigeki Tomishima

Wilfred Gomes

Digvijay Ashokkumar Raorane

Chandra Mohan Jha

Mahesh K Kumashikar

Srikanth Nimmagadda

Krishna Vasanth Valavala

Arghya Sain

Prasad Ramanathan

Yí Li

Hector Amador

Embodiments may relate to a microelectronic assembly including a substrate; a first die electrically coupled to the substrate, wherein the first die includes a first edge, a second edge, a third edge opposite the first edge, and a fourth edge opposite the second edge; and a second die electrically coupled to the substrate adjacent to the second edge of the first die and communicatively coupled to the first die, wherein the second die includes a fifth edge and a sixth edge opposite the fifth edge, and wherein the fifth edge of the second die is substantially aligned with the first edge of the first die and the sixth edge of the second die extends beyond the third edge of the first die, where the first die includes a processor die and the second die includes an input/output (I/O) die.

Disaggregated die with input/output (I/O) tiles

Various embodiments relate to a semiconductor package. The semiconductor package includes a first die. The first die includes a first bridge interconnect region. The semiconductor package further includes a second die. The second die includes a second bridge interconnect region. The semiconductor package includes a bridge die. The bridge die includes a first contact area to connect to the first bridge interconnect region and a second contact area to connect to the second bridge interconnect region. In the semiconductor package, the first bridge interconnect region is larger than the second bridge interconnect region. Additionally, each of the first bridge interconnect region and the second bridge interconnect region include a plurality of conductive bumps. An average pitch between adjacent bumps of the first bridge interconnect region is larger than an average pitch between adjacent bumps of the second bridge interconnect region.

Pitch translation architecture for semiconductor package including embedded interconnect bridge

An example microelectronic assembly includes a substrate, a bridge die over the substrate, and a die stack between the substrate and the bridge die, the die stack including a logic die and at least one memory die, where the logic die is between the at least one memory die and the bridge die.

Integrated circuit package with flipped high bandwidth memory device

Apparatuses, devices and systems associated with semiconductor packages with chiplet and memory device coupling are disclosed herein. In embodiments, a semiconductor package may include a first chiplet, a second chiplet, and a memory device. The semiconductor package may further include an interconnect structure that couples the first chiplet to a first memory channel of the memory device and the second chiplet to a second memory channel of the memory device. Other embodiments may be described and/or claimed.

Semiconductor packages with chiplets coupled to a memory device

A package substrate is disclosed. The package substrate includes a die package in the package substrate located at least partially underneath a location of a power delivery interface in a die that is coupled to the surface of the package substrate. Connection terminals are accessible on a surface of the die package to provide connection to the die that is coupled to the surface of the package substrate. Metal-insulator-metal layers inside the die package are coupled to the connection terminals.

Capacitor die embedded in package substrate for providing capacitance to surface mounted die

Embodiments disclosed herein include electronic packages with improved differential signaling architectures. In an embodiment, the electronic package comprises a package substrate, where the package substrate comprises alternating metal layers and dielectric layers. In an embodiment, a first trace is embedded in the package substrate, where the first trace has a first thickness that extends from a first metal layer to a second metal layer. In an embodiment, the electronic package further comprises a first ground plane laterally adjacent to a first side of the first trace, and a second ground plane laterally adjacent to a second side of the first trace.

Variable in-plane signal to ground reference configurations

Embodiments herein relate to systems, apparatuses, or processes for an interconnect hub for dies that includes a first side and a second side opposite the first side to couple with three or more dies, where the second side includes a plurality of electrical couplings to electrically couple at least one of the three or more dies to another of the three or more dies to facilitate data transfer between at least a subset of the three or more dies. The three or more dies may be tiled dies.

Interconnect hub for dies

Systems and methods of conductively coupling at least three semiconductor dies included in a semiconductor package using a multi-die interconnect bridge that is embedded, disposed, or otherwise integrated into the semiconductor package substrate are provided. The multi-die interconnect bridge is a passive device that includes passive electronic components such as conductors, resistors, capacitors and inductors. The multi-die interconnect bridge communicably couples each of the semiconductor dies included in the at least three semiconductor dies to each of at least some of the remaining at least three semiconductor dies. The multi-die interconnect bridge occupies a first area on the surface of the semiconductor package substrate. The smallest of the at least three semiconductor dies coupled to the multi-die interconnect bridgeoccupies a second area on the surface of the semiconductor package substrate, where the second area is greater than the first area.

Bridge hub tiling architecture

A system and method of providing high bandwidth and low latency memory architecture solutions for next generation processors is disclosed. The package contains a substrate, a memory device embedded in the substrate via EMIB processes and a processor disposed on the substrate partially over the embedded memory device. The I/O pads of the processor and memory device are vertically aligned to minimize the distance therebetween and electrically connected through EMIB uvias. An additional memory device is disposed on the substrate partially over the embedded memory device or on the processor. I/O signals are routed using a redistribution layer on the embedded memory device or an organic VHD redistribution layer formed over the embedded memory device when the additional memory device is laterally adjacent to the processor and the I/O pads of the processor and additional memory device are vertically aligned when the additional memory device is on the processor.

Embedded memory device and method for embedding memory device in a substrate

A package is disclosed. The package includes a base die. The base die includes voltage regulating circuitry and input and output (I/O) circuitry. The I/O circuitry surrounds the voltage regulating circuitry. The package also includes a top set of dies. The top set of dies includes a plurality of dies that include logic circuitry and a plurality of dies that include passive components. The plurality of dies that include passive components surround the plurality of dies that include logic circuitry. The plurality of dies that includes passive components is coupled to the logic circuitry and to the voltage regulating circuitry.

Multilevel die complex with integrated discrete passive components

Embodiments include electronic packages and methods of forming such packages. An electronic package includes a memory module comprising a first memory die. The first memory die includes first interconnects with a first pad pitch and second interconnects with a second pad pitch, where the second pad pitch is less than the first pad pitch. The memory module also includes a redistribution layer below the first memory die, and a second memory die below the redistribution layer, where the second memory die has first interconnects with a first pad pitch and second interconnects with a second pad pitch. The memory module further includes a mold encapsulating the second memory die, where through mold interconnects (TMIs) provide an electrical connection from the redistribution layer to mold layer. The TMIs may be through mold vias. The TMIs may be made through a passive interposer that is encapsulated in the mold.

Architecture and processes to enable high capacity memory packages through memory die stacking

Growing community of inventors

Chandler, AZ, United States of America

Andrew Paul Collins