Texas Instruments Corporation

Andrew P Lane

Robert H Havemann

Kenneth E Bean

Douglas A Webb

Gene R Frederick

Norris E Tidwell

A wafer 2 is supported polished (active) face down in a recess formed in the upper surface of a second wafer 4 which serves as a wafer support. The two wafers 2, 4 are disposed in an atmosphere of steam at 900.degree. C. at a pressure of 500 psi which results in forming an oxide on the polished face of the wafer 2.

Method for minimizing particle generation on a wafer surface during high

In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.

Deposition of silicon-containing films using organosilicon compounds and

The disclosure relates to a method of growing thermal oxide on silicon wherein the oxide is grown at an increased rate, at reduced temperature or a combination thereof. This is accomplished by operating in an hermetic quartz tube capable of withstanding high pressure with steam or oxygen at super atmospheric pressure.

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Westminster, TX, United States of America

Andrew P Lane