International Business Machines Corporation

The Carborundum Company

Other

Andrew Michael Reitter

Benjamin V Fasano

Subhash Laxman Shinde

Lester W Herron

Robert Hannon

David B Goland

Gregory M Johnson

Carla Natalia Cordero

Jon Alfred Casey

Niranjan Mohanlal Patel

Rao Venkateswara Vallabhaneni

Jonathan H Harris

Richard A Bates

Lisa M Studzinski

Robert A Youngman

Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.

Method for the controlling of certain second phases in aluminum nitride

Method for controlling of certain second phases in aluminum nitride

A method and apparatus for flattening a ceramic body comprised primarily of an aluminum nitride system having a liquid phase additive necessary for low temperature sintering during a firing thereof is disclosed. The ceramic body is referred to as an aluminum nitride multilayer ceramic (AlN MLC). The method and apparatus include a support tile having a first coating on a contact surface thereof, the AlN MLC for being placed upon the contact surface of the support tile. A load flattening tile having a second coating on a contact surface thereof is provided, the load flattening tile for being placed with its coated surface upon and in contact with the AlN MLC. Lastly, a furnace is provided for heating the support tile, AlN MLC, and load flattening tile at temperatures greater than 1500.degree. C. for an amount of time necessary to flatten the ceramic body to a desired degree of flatness, wherein the first coating and the second coating of the support tile and the load flattening tile, respectively, react with the AlN MLC for quenching the liquid phase of the ceramic body to prevent a sticking of the support tile and the load flattening tile to the AlN MLC during a flattening process.

Method for flat firing aluminum nitride/tungsten electronic modules

Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Aluminum nitride body having graded metallurgy

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Poughkeepsie, NY, United States of America

Andrew Michael Reitter