Intel Corporation

Andrew James Brown

Lauren Ashley Link

Prithwish Chatterjee

Sai Vadlamani

Rahul Jain

Sheng C Li

Cheng Xu

Kristof Darmawikarta

Robert Alan May

Yikang Deng

Ying Wang

Kyu Oh Lee

Chong Zhang

Liwei Cheng

Aleksandar Aleksov

Henning Braunisch

Sri Ranga Sai Boyapati

Brandon C Marin

Junnan Zhao

Thomas L Sounart

Ji Yong Park

Jonathan Rosch

Srinivas V Pietambaram

Zhichao Zhang

Amruthavalli Pallavi Alur

Jeremy D Ecton

Dilan Seneviratne

Wei-Lun Kane Jen

Siddharth K Alur

Praneeth Kumar Akkinepally

Frank Truong

Jiwei Sun

Kaladhar Radhakrishnan

Gang Duan

Tarek A Ibrahim

Hiroki Tanaka

Sandeep B Sane

Amanda E Schuckman

Bin Zou

Lilia May

Chi-Mon Chen

Luke J Garner

Lisa Ying Ying Chen

Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.

Substrate integrated thin film capacitors using amorphous high-k dielectrics

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

Microelectronic assemblies having conductive structures with different thicknesses on a core substrate

A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.

Coreless organic packages with embedded die and magnetic inductor structures

Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.

Methods of embedding magnetic structures in substrates

Disclosed herein are magnetic structures in integrated circuit (IC) package supports, as well as related methods and devices. For example, in some embodiments, an IC package support may include a conductive line, a magnetic structure around the conductive line, and material stubs at side faces of the magnetic structure.

Magnetic structures in integrated circuit package supports

Techniques for mounting a semiconductor chip in a circuit board assembly includes using different buildup materials on opposite sides of a core to optimize stress in the first level interconnect structure (between the chip and core) and/or the second level interconnect structure (between the core and circuit board). The core can be, for example, ceramic, glass, or glass cloth-reinforced epoxy. In one example, the first side of the core has one or more layers of conductive material within a first buildup structure comprising a first buildup material. The second side of the substrate has one or more layers of conductive material within a second buildup structure comprising a second buildup material different from the first buildup material. In another example, an outermost layer of the second buildup structure is a ductile material that functions to decouple stress in the interconnect between the substrate and a circuit board.

Package substrate with reduced interconnect stress

Embodiments include a package substrate, a method of forming the package substrate, and a semiconductor package. A package substrate includes a conductive layer in a dielectric, a first trace and a first via pad of the conductive layer having a first thickness, and a second trace and a second via pad of the conductive layer having a second thickness. The second thickness of second trace and second via pad may be greater than the first thickness of the first trace and first via pad. The dielectric may include a first dielectric thickness and a second dielectric thickness, where the second dielectric thickness may be less than the first dielectric thickness. The package substrate may include a third via having a third thickness on the first via pad, and a fourth via having a fourth thickness on the second via pad, wherein the third thickness is greater than the fourth thickness.

Dual trace thickness for single layer routing

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a substrate layer having a surface, wherein the substrate layer includes a photo-imageable dielectric (PID) and an electroless catalyst; a first conductive trace having a first thickness on the surface of the substrate layer; and a second conductive trace having a second thickness on the surface of the substrate layer, wherein the first thickness is greater than the second thickness.

Microelectronic assemblies having conductive structures with different thicknesses

Embodiments herein describe techniques for a semiconductor device including a package substrate. The package substrate includes a via pad at least partially in a core layer. A first dielectric layer having a first dielectric material is above the via pad and the core layer, where the first dielectric layer has a first through hole that is through the first dielectric layer to reach the via pad. A second dielectric layer having a second dielectric material is at least partially filling the first through hole, where the second dielectric layer has a second through hole that is through the second dielectric layer to reach the via pad. A via is further within the second through hole of the second dielectric layer, surrounded by the second dielectric material, and in contact with the via pad. Other embodiments may be described and/or claimed.

Vias for package substrates

A thin-film insulator comprises a first electrode over a substrate. A photo up-converting material is over the first electrode. A cured photo-imageable dielectric (PID) containing a high-k filler material is over the photo up-converting material, wherein the cured PID is less than 4 &#x3bc;m in thickness, and a second electrode is over the cured PID.

Ultra-thin dielectric films using photo up-conversion for applications in substrate manufacturing and integrating passives

Embodiments herein relate to systems, apparatuses, processing, and techniques related to patterning one or more sides of a thin film capacitor (TFC) sheet, where the TFC sheet has a first side and a second side opposite the first side. The first side and the second side of the TFC sheet are metal and are separated by a dielectric layer, and the patterned TFC sheet is to provide at least one of a capacitor or a routing feature on a first side of a substrate that has the first side and a second side opposite the first side.

Patterning of thin film capacitors in organic substrate packages

Embodiments include package substrates and method of forming the package substrates. A package substrate includes a first encapsulation layer over a substrate, and a second encapsulation layer below the substrate. The package substrate also includes a first interconnect and a second interconnect vertically in the first encapsulation layer, the second encapsulation layer, and the substrate. The first interconnect includes a first plated-through-hole (PTH) core, a first via, and a second via, and the second interconnect includes a second PTH core, a third via, and a fourth via. The package substrate further includes a magnetic portion that vertically surrounds the first interconnect. The first PTH core has a top surface directly coupled to the first via, and a bottom surface directly coupled to the second via. The second PTH core has a top surface directly coupled to the third via, and a bottom surface directly coupled to the fourth via.

Sandwich-molded cores for high-inductance architectures

A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.

Release layer-assisted selective embedding of magnetic material in cored and coreless organic substrates

An apparatus system is provided which comprises: a photoimageable dielectric layer; a first interconnect structure formed through the photoimageable dielectric, the first interconnect structure formed at least in part using a lithography process; and a second interconnect structure formed through the photoimageable dielectric, the second interconnect structure formed at least in part using a laser drilling process.

Package architecture utilizing photoimageable dielectric (PID) for reduced bump pitch

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Phoenix, AZ, United States of America

Andrew James Brown