Applied Materials, Inc.

Andrew Conners

Soonil Hong

Kaushal Kishore Singh

Virendra V S Rana

Michael P Nault

Anthony Lam

Choon Kun Ryu

Anand Gupta

Xin Sheng Guo

Virendra V Rana

A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.

Method and apparatus for improving gap-fill capability using chemical and physical etchbacks

A semiconductor manufacturing process with improved gap fill capabilities is provided by a three step process of FSG deposition/etchback/FSG deposition. A first layer of FSG is partially deposited over a metal layer. An argon sputter etchback step is then carried out to etch out excess deposition material. Finally, a second layer of FSG is deposited to complete the gap fill process.

Method for submicron gap filling on a semiconductor substrate

Method and apparatus for improving gap-fill capability using chemical

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Los Gatos, CA, United States of America

Andrew Conners