Qorvo Us, Inc.

Triquint Semiconductor Corporation

Andrew Arthur Ketterson

Christo Pavel Bojkov

Yongjie Cui

Xing Chen

Xing Gu

Tarak A Railkar

Kevin J Anderson

Deep C Dumka

Robert Charles Dry

Anthony M Chiu

Edward A Beam, Iii

Bror Peterson

Dana Jay Sturzebecher

Larry Charles Witkowski

Jose Jimenez

Cathy Lee

Yu Cao

Michael Schuette

Aaditya Mahajan

Jose L Jiminez

Christopher T Youtsey

Arthur Donald Ballato

An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Method for packaging an integrated circuit (IC) package with embedded heat spreader in a redistribution layer (RDL)

A monolithic microwave integrated circuit (MMIC) with embedded transmission line (ETL) ground shielding is provided. In an exemplary aspect, an ETL MMIC according to this disclosure includes a MMIC substrate having an active side, an ETL dielectric layer covering the active side, and a topside ground plane over the ETL dielectric layer. The active side includes one or more transmission lines or other components which may undesirably couple to metal signal lines (e.g., package metal interconnects) in an external circuit assembly. The topside ground plane in the ETL MMIC provides shielding to reduce such electromagnetic coupling. The topside ground plane can also facilitate improved thermal paths for heat dissipation, such as through a redistribution layer (RDL) to a next higher assembly (NHA) and/or through a backside ground plane of the MMIC substrate.

Monolithic microwave integrated circuit (MMIC) with embedded transmission line (ETL) ground shielding

Monolithic microwave integrated circuits (MMICs) with backside interconnects for fanout-style packaging are disclosed. Fanout-style packaging, such as fanout wafer (FOWLP) or fanout panel-level packaging (FOPLP), facilitates a high density package for MMICs. However, the fanout-style packaging may produce undesired electromagnetic (EM) coupling between a MMIC die and metal features in a redistribution layer (RDL) of the FOW/PLP package and/or a next higher assembly (NHA). In an exemplary aspect, a circuit package according to this disclosure includes the MMIC die and an RDL. The MMIC includes a chip side with components which may undesirably couple to metal signal lines (e.g., package metal interconnects) in the RDL. The chip side of the MMIC is oriented away from the RDL to reduce such EM coupling.

MMICs with backside interconnects for fanout-style packaging

The disclosure is directed to an integrated circuit (IC) die stacked with a backer die, including capacitors and thermal vias. The backer die includes a substrate material to contain and electrically insulate one or more capacitors at a back of the IC die. The backer die further includes a thermal material that is more thermally conductive than the substrate material for thermal spreading and increased heat dissipation. In particular, the backer die electrically couples capacitors to the IC die in a stacked configuration while also spreading and dissipating heat from the IC die. Such a configuration reduces an overall footprint of the electronic device, resulting in decreased integrated circuits (IC) packages and module sizes. In other words, instead of placing the capacitors next to the IC die, the capacitors are stacked on top of the IC die, thereby reducing an overall surface area of the package.

Integrated circuit die stacked with backer die including capacitors and thermal vias

Integrated circuit (IC) package with embedded heat spreader in a redistribution layer (RDL)

A high electron mobility transistor is disclosed. The high electron mobility transistor has a gallium nitride layer with a plurality of two-dimensional electron gas channels, wherein the gallium nitride layer is disposed over a substrate. A gate contact has a gate bus disposed over the gallium nitride layer. The gate bus includes a plurality of gate feet extending from the gate bus into the gallium nitride layer. Each gate foot of the plurality of gate feet has a trapezoid-shaped cross-section with a longer base and a shorter base in parallel with a longitudinal axis of the gate bus. A source contact is disposed over the gallium nitride layer, and a drain contact is disposed over the gallium nitride layer, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.

High electron mobility transistor

Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.

Integration of self-biased magnetic circulators with microwave devices

A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.

Passive magnetic devices

A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.

Environmental protection for wafer level and package level applications

A BAW device includes a substrate, a first reflector, and at least two BAW transducers. The first reflector resides over the substrate and has a plurality of reflector layers. A first BAW transducer resides over a first section of the first reflector, has a first series resonance frequency, and has a first piezoelectric layer of a first thickness between a first top electrode and a first bottom electrode. The second BAW transducer resides over a second section of the first reflector, has a second series resonance frequency that is different than the first series resonance frequency, and has a second piezoelectric layer of a second thickness, which is different than the first thickness, between a second top electrode and a second bottom electrode.

BAW structure having multiple BAW transducers over a common reflector, which has reflector layers of varying thicknesses

Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a gate, a source pad and a drain pad arranged such that the gate is separated from the source pad and the drain pad by air, and an insulating layer coupled with a portion of the gate such that at least a portion of the insulating layer is separated from the source pad and the drain pad by the air. Methods for making the same also are described.

Transistor gate having an insulating layer support structure

A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.

Growing community of inventors

Dallas, TX, United States of America

Andrew Arthur Ketterson