Basf Se Corporation

Bafs Se

Andrei Honciuc

Andreas Klipp

Christian Bittner

Guenter Oetter

Günter Oetter

Simon Braun

Sabrina Montero Pancera

Chu-Ya Yang

The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

Defect reduction rinse solution containing ammonium salts of sulfoesters

A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask 

Compositions for anti pattern collapse treatment comprising gemini additives

In a method for cleaning photo masks having patterns with smallest line-space dimensions below 200 nm, a surfactant composition A is used, wherein A contains at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl and wherein A exhibits, at a 1% by weight aqueous solution, a static surface tension below 25 mN/m.

Use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning

In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95&#xb0; compared to the contact angle of water to the substrate before such contacting.

Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of &#x3e;2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less

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Ludwigshafen, Germany

Andrei Honciuc