Mattson Technology, Inc

Steag Rtp Systems Gmbh

Andreas Tillmann

Narasimha Acharya

Dieter Zernickel

Uwe Kreiser

Sohaila Shooshtarian

Mike Elbert

In order to achieve temperature distribution, in particular a homogeneous temperature distribution in, for example, a substrate during a thermal treatment process of said substrate, a method is disclosed for the thermal treatment of substrates, in particular semi-conductor wafers, in a process chamber comprising at least one temperature distribution influencing element located in the process chamber. During thermal treatment, the spatial arrangement of the element is altered relative to the substrate and/or to the process chamber. A device for the thermal treatment of substrates in a process chamber is also disclosed, comprising at least one temperature distribution influencing element located in a process chamber wherein a device is provided in order to alter the spatial arrangement of the element relative to the substrate and/or to the process chamber during the thermal treatment process.

Method and apparatus for the thermal treatment of substrates

The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. In one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperature control.

Localized heating and cooling of substrates

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Tomerdingen, Germany

Andreas Tillmann