Daimler-Benz Ag

Forschungszentrum Julich Gmbh

Temic Telefunken Microelectronic Gmbh

Temic Telefunken

Andreas Schuppen

Harry Dietrich

Ulf Konig

Hans Luth

Michael Gotz Berger

Horst Kibbel

Andreas Gruhle

Michel Marso

Heinz-Achim Hefner

Herbert Munder

Layered system with an electrically activatable layer

A method of fabricating an HBT using differential epitaxy. By using an emitter mask and an exside-inside spacer structure, a self-aligned fabrication of an emitter contact and a base contact is carried out. The emitter contact layer is made from amorphous silicon. Since the entire process sequence is very temperature-stable and can be carried out at lower implantation energies than conventional methods, HBT's having a high layer quality can be fabricated by the method of the invention which is suitable for mass production and with which high oscillation frequencies can be accomplished.

Method of fabricating a heterobipolar transistor

A process for preparing a bipolar transistor for very high frequencies is described, which is especially advantageous for the preparation of heterobipolar transistors and leads to components with low parasitic capacities and low base lead resistance. The process includes forming a structured first layer with collector zone and insulation areas surrounding the collector zone on a monocrystalline lead layer. A series of monocrystalline transistor layers are grown on the first layer over the collector zone by differential epitaxy and a series of polycrystalline layers is grown at the same time over the insulation areas. A series of polycrystalline layers is designed as a base lead.

Process for preparing a heterojunction bipolar transistor

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Ulm, Germany

Andreas Schuppen