U.S. Philips Corporation

Andreas M Van Der Putten

Johannes M Rikken

Robertus A Wolters

Johannes W Jacobs

Lambertus G Fokkink

Edwin T Swart

Cornells G De Kort

Johannes W DeBakker

Johannes W De Bakker

Henricus A Kox

By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown on the bond pads of semiconductor devices without lateral overgrowth of the coating layer 3. The angle of inclination a is a function of the concentration of the stabilizer.

Method of manufacturing a semiconductor device by forming pyramid shaped

By virtue of an activating pretreatment with a polymer-stabilized Pd sol, patterns, such as transparent patterns of indium-tin oxide, can be deposited on glass by electroless metallization. For example polyvinyl alcohol is used as the polymer.

Method of selectively providing a pattern of a material other than glass

A semiconductor device with a monocrystalline silicon body (1) is provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminum metallization. To avoid undesirable separation of silicon, a discontinuous nucleus layer (5) of a metal nobler than silicon is formed on the silicon body (1) in the contact holes (3) preceding the provision of the metallization (4). Metals such as palladium and copper may be used to form the discontinuous layer.

Semiconductor contact with discontinuous noble metal

The adhesion of electroless copper to a substrate (1) for a conductor pattern can be improved by applying a SiO.sub.2 layer (3) on which a thin metal pattern of, for example, TiW (51) is provided. Anchors are formed on the surface by subjecting the SiO.sub.2 layer to an underetching treatment. The electroless copper (9) grows around these anchors and, hence, adheres to the substrate.

Method of providing a copper pattern on a dielectric substrate

A TiW layer (14 and 14') between a nickel plug (16 and 16') and a silicon substrate (1) of a semiconductor device precludes the formation of nickel silicides. The nickel plugs are formed by means of an electroless nickel bath to which stabilizers are added which ensure that the contact holes (13 and 13') are filled with nickel right up to the edge.

Method of metallizing contact holes in a semiconductor device

From a solution comprising a salt of a noble metal, for example Pd, and ammonia or amine a metal track is deposited on a substrate surface which may be an insulator, semiconductor or conductor, by means of a laser beam.

Method of selectively providing a metal from the liquid phase on a

By using a nucleating solution having a low concentration of PdCl.sub.2 at an increased temperature, contact holes can be nucleated in a selective manner and, subsequently, metallized in an electroless bath, said contact holes being etched by means of plasma etching in dielectric layers of VLSI devices having a silicon semiconductor body.

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Eindhoven, Netherlands

Andreas M Van Der Putten