Applied Materials, Inc.

Unaxis Deutschland Gmbh

Andreas Kloeppel

Christoph Daube

Johannes Stollenwerk

Erkan Koparal

Thomas Linz

A substrate processing system for processing an essentially vertically oriented substrate is described. The system includes a first processing chamber having a first processing region to deposit a first layer comprising a first material, a second processing chamber having a second processing region to deposit a second layer over the first layer, the second layer comprising a second material, a third processing chamber having a third processing region to deposit a layer comprising the second material, a transfer chamber providing essentially linear transport paths with the first, second, and third chambers, respectively, and a chamber comprising a first and a second transportation track, wherein at least one of the first and second transportation tracks forms an essentially linear transportation path with the first processing chamber, wherein the first chamber is adapted to receive the substrate from the transfer chamber, and to deposit a further layer comprising the first material.

Coating apparatus and method

The invention refers to a coating device for the deposition of thin films on large area substrates comprising a process chamber, an electrode arrangement within the process chamber () which is adapted for generating a plasma adjacent to the electrode arrangement () at at least two opposing sides of the electrode arrangement, and at least two substrate holders for supporting at least two substrates () in substrate positions on opposing sides of the electrode arrangement, the electrode arrangement being located between the substrate positions and the substrates facing in the substrate positions the at least two plasma generated at the electrode arrangement, wherein the electrode arrangement comprises at least two cathodes arranged in a plane, the cathodes being able to generate a plasma at at least two sides of each cathode. The invention further refers to a method for coating substrates with thin films comprising the following steps:

Double-coating device with one process chamber

Sparking is suppressed during high-frequency sputtering by a high-frequency generator ( ) which has a controlled switching unit ( ) that is connected upstream in relation to the output of the generator. A high-frequency supply signal that is generated at the output of the high-frequency generator is stopped for plasma discharge (PL) for a short time, by the switching unit.

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Glauburg, Germany

Andreas Kloeppel