Basf Se Corporation

Bafs Se

Andreas Klipp

Christian Bittner

Michael Lauter

Andrei Honciuc

Guenter Oetter

Haci Osman Guevenc

Simon Braun

Julian Proelss

Max Siebert

Raimund Mellies

Christian Daeschlein

Yi Ping Cheng

Jhih Jheng Ke

Joannes Theodorus Valentinus Hoogboom

Yuzhuo Li

Martin Kaller

Daniel Loeffler

Robert Reichardt

Leonardus Leunissen

Yeni Burk

Te Yu Wei

Peter Przybylski

Roelf-Peter Baumann

MeiChin Shen

Mei Chin Shen

Arno Lange

Günter Oetter

Hans-Joachim Haehnle

Dieter Mayer

Cornelia Roeger-Goepfert

Frank O Pirrung

Szilard Csihony

Vijay Immanuel Raman

Hans-Joachim Hähnle

Lothar Engelbrecht

Shyam Sundar Venkataraman

Sabrina Montero Pancera

Frank Pirrung

Marcel Brill

Mingjie Zhong

Berthold Ferstl

Piotr Przybylski

Sven Hildebrandt

Che Wei Wang

I Chen Chou

Chi Yueh Kao

Chengwei Lin

Sheng Hsuan Wei

ChiaHao Chan

ChienShin Chen

Chu-Ya Yang

Ivan Garcia Romero

Leonardos Leunissen

Chia Ching Ting

Christian DÄSCHLEIN

Meichin Shen

Chienshin Chen

Chiahao Chan

Described herein is a method of using a composition for selectively etching a silicon layer in the presence of a layer including a silicon germanium alloy, the composition including: (a) 4 to 15% by weight of an amine of formula (E1), and (b) water, where X, X, and Xare independently selected from a chemical bond and C-Calkanediyl; Yis selected from N, CR, and P; Ris selected from H and C-Calkyl.

Use of a composition and a process for selectively etching silicon

Described herein is a non-aqueous composition including where

Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below

A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.

Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt

Described is a composition comprising as primary surfactant an ionic compound comprising one or more fluoroalkyl groups and as secondary surfactant at least one non-ionic compound comprising one or more polyalkyloxy and/or polyalkylenoxy groups, for cleaning or rinsing a product, preferably a product used in the semiconductor industry, and a respective use of said composition. Further described is a method of making a cleaned or rinsed product, preferably a product used in the semiconductor industry, comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below, comprising the step of cleaning or rinsing said product with the composition of the invention.

Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product

Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN

The use of an organic compound as cleavable additive, preferably as cleavable surfactant, in the modification and/or treatment of at least one surface of a semiconductor substrate is described. Moreover, it is described a method of making a semiconductor substrate, comprising contacting at least one surface thereof with an organic compound, or with a composition comprising it, to treat or modify said surface, cleaving said organic compound into a set of fragments and removing said set of fragments from the contacted surface. More in particular, a method of cleaning or rinsing a semiconductor substrate or an intermediate semiconductor substrate is described. In addition, a compound is described which is suitable for the uses and methods pointed out above and which preferably is a cleavable surfactant.

Cleavable additives for use in a method of making a semiconductor substrate

A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.

Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors

Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein Rand Rare independently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, Ris methyl and x and y are an integer, 1 (B)poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5. 

Composition for post chemical-mechanical-polishing cleaning

A post chemical-mechanical-polishing (post-CMP) cleaning composition including:

Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5. 

The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

Defect reduction rinse solution containing ammonium salts of sulfoesters

A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask 

Compositions for anti pattern collapse treatment comprising gemini additives

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Lambsheim, Germany

Andreas Klipp